Allicdata Part #: | APT8014JLL-ND |
Manufacturer Part#: |
APT8014JLL |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | MOSFET N-CH 800V 42A SOT-227 |
More Detail: | N-Channel 800V 42A (Tc) 595W (Tc) Chassis Mount IS... |
DataSheet: | APT8014JLL Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 5V @ 5mA |
Package / Case: | SOT-227-4, miniBLOC |
Supplier Device Package: | ISOTOP® |
Mounting Type: | Chassis Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 595W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 7238pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 285nC @ 10V |
Series: | POWER MOS 7® |
Rds On (Max) @ Id, Vgs: | 140 mOhm @ 21A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 42A (Tc) |
Drain to Source Voltage (Vdss): | 800V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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APT8014JLL is a high-performance, compact, and improved version of field effect transistors (FETs). It is widely used in industrial and consumer electronic applications, and is ideal for use in medical, automotive, and military applications. This device is suitable for direct drive and high frequency power conversion and for use in high speed switching and isothermal thermal management.
APT8014JLL is a Medium-Input, Low-Voltage N-Channel MOSFET. It is designed to provide excellent performance in high frequency switch mode and low voltage power conversion applications. It is especially suitable for direct drive, logic level switching and variable frequency/speed control applications. This device is built with a SOT-23 package with a drain to source breakdown voltage of 8V, a drain current of 2A, and a maximum gate source voltage of 5V.
APT8014JLL is designed with a low on-resistance and a high switching speed which is beneficial in reducing power losses and device size. It is also equipped with a gate drive drain current, so that the gate-to-source voltage can be easily maintained at the same level as the gate drive current. This also reduces the gate resistance. The device also utilizes a multi-channel trench gate structure that reduces gate capacitance and increases breakdown voltage, as well as improves switching performance.
The working principle of APT8014JLL is based on Field Effect Transistor (FET) technology. FETs are transistors that utilize an electric field to control the current flow. This is achieved by using the junction capacitance between the gate and the semiconductor material through which the current flows. With the application of an electric field, carriers (electrons and/or holes) can be attracted to the gate and trapped in the depletion layer, thus blocking or allowing the flow of current.
In the case of APT8014JLL, the depletion layer increases when voltage applied to the gate is increased. As a result, the bias current of the device is reduced, and a higher threshold voltage is applied. This feature allows the device to be switched on faster than other conventional FETs. This feature also allows the device to handle higher switching speeds.
APT8014JLL is also optimized for high frequency operation. This is because the device has a low gate to drain capacitance, which reduces the amount of noise generated during high frequency operations. Furthermore, the device has a low on-resistance and high switching speed, which is useful for high frequency operations such as switching power supplies and high-performance AC-DC converters.
In conclusion, APT8014JLL is a high-performance, compact, and improved version of field effect transistors (FETs). It is an excellent device for a variety of applications including direct drive, logic level switching, variable frequency/speed control, and high-power switching power supplies. Additionally, the device is designed with a low on-resistance, a high switching speed, and a gate drive drain current, which make it optimal for high-frequency applications.
The specific data is subject to PDF, and the above content is for reference
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