APT8M100B Allicdata Electronics
Allicdata Part #:

APT8M100B-ND

Manufacturer Part#:

APT8M100B

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: MOSFET N-CH 1000V 8A TO-247
More Detail: N-Channel 1000V 8A (Tc) 290W (Tc) Through Hole TO-...
DataSheet: APT8M100B datasheetAPT8M100B Datasheet/PDF
Quantity: 166
Stock 166Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 5V @ 1mA
Package / Case: TO-247-3
Supplier Device Package: TO-247 [B]
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 290W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1885pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 1.8 Ohm @ 4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Drain to Source Voltage (Vdss): 1000V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The APT8M100B Field Effect Transistor (FET) is a single, N-Channel MOSFET that is designed to be used in various electrical and electronic applications. The APT8M100B features a drain-source breakdown voltage of 100 V and an effective input capacitance of 5 pF. This MOSFET is intended to be used as a power switch in battery-operated electronic equipment, such as medical, cellular, and industrial equipment.

The APT8M100B MOSFET is a highly reliable and efficient power switch. It offers superior performance in terms of switching speed, low power consumption and improved power efficiency. Due to its small size and low power consumption, the APT8M100B is ideal for applications that require high switching speed and low power consumption. The APT8M100B has a drain-source resistance of 0.02 Ω @Vgs=10V.

The APT8M100B offers a wide range of features that make it a highly suitable choice for a number of applications. For example, the APT8M100B provides excellent linearity, low capacitance and high current handling capabilities. As the gate-source capacitance is <10 pF, the APT8M100B MOSFET offers a very low turn-on time and provides a fast switching capability. Additionally, the APT8M100B also has an extended temperature range of -40 to +150°C and a drain-drain leakage current of less than 10 µA.

The working principle of the APT8M100B MOSFET is simple. When a voltage is applied to the gate terminal, the charge between the gate and the source creates an electric field which modulates the conductivity of the channel. This amplification of the electric field controls the amount of current flowing through the device between source and drain terminals. Due to this, the APT8M100B power switch can be used to regulate the supply of electric current from one point to another.

The APT8M100B MOSFET has been designed to provide users with a high-performance switch that requires minimal effort to install and use. The APT8M100B has been proven to be an ideal switch for a variety of applications, since it offers outstanding performance in terms of switching speed, low power consumption and extended temperature range. With its wide range of features, the APT8M100B is the ideal choice for controlling power efficiently and reliably in battery-operated electronic equipment.

The specific data is subject to PDF, and the above content is for reference

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