
Allicdata Part #: | APT80GA60LD40-ND |
Manufacturer Part#: |
APT80GA60LD40 |
Price: | $ 10.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | IGBT 600V 143A 625W TO264 |
More Detail: | IGBT PT 600V 143A 625W Through Hole TO-264 |
DataSheet: | ![]() |
Quantity: | 120 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
1 +: | $ 9.09720 |
10 +: | $ 8.27190 |
25 +: | $ 7.65170 |
100 +: | $ 7.03136 |
250 +: | $ 6.41094 |
500 +: | $ 5.99733 |
Power - Max: | 625W |
Supplier Device Package: | TO-264 |
Package / Case: | TO-264-3, TO-264AA |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Reverse Recovery Time (trr): | 22ns |
Test Condition: | 400V, 47A, 4.7 Ohm, 15V |
Td (on/off) @ 25°C: | 23ns/158ns |
Gate Charge: | 230nC |
Input Type: | Standard |
Switching Energy: | 840µJ (on), 751µJ (off) |
Series: | POWER MOS 8™ |
Vce(on) (Max) @ Vge, Ic: | 2.5V @ 15V, 47A |
Current - Collector Pulsed (Icm): | 240A |
Current - Collector (Ic) (Max): | 143A |
Voltage - Collector Emitter Breakdown (Max): | 600V |
IGBT Type: | PT |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tube |
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An Insulated Gate Bipolar Transistor (IGBT) is an electronic component that acts as an electronic switch in varying electrical circuits. The IGBT is principally a combination of a field-effect transistor and a bipolar transistor, and is available in a variety of packages and configurations. The device is usually commercialized with the abbreviations APT and/or GA60LD, where APT80GA60LD40 stands for an IGBT with 80A continuous collector current rating, 60Vdc maximum working voltage, and 40mA anode gate current.
Application Field
The IGBTs are widely used in switching applications due to their low on-resistance, high-switching speed, high voltage blocking capability, low power consumption and thermal protection. Besides, due to their special construction, IGBTs have some special specific applications like sine wave inverters and resonant power converters as well.In the case of the APT80GA60LD40 IGBT, its most typical application is for home and industrial inverters, since it features a high collector current capability (80A), together with anode gate current of 40mA, what makes it optimized for medium to high power switching operations.
Working Principle
An IGBT operates as a switch in a power electronic circuit. As other transistors, it is a four-terminal semiconductor device, with two junctions. The emitter and collector are the two N-type junctions, while the base and gate are the two P-type junctions. Its main characteristic is the presence of an insulated gate between the base and the gate terminals, which generates a strong electrostatic field.The main working principle of an IGBT is based on the transistor effect. When the gate is supplied with voltage, the electrons in the gate region move towards the P-type semiconductor material, what creates an N-channel between the emitter and collector. As a result, current passes between the emitter and collector, allowing the IGBT to act as a switch.
Conclusions
The combination of the field-effect transistor and the bipolar transistor makes the IGBT an ideal choice for many different industries due to its low on-resistance and high switching speed. The APT80GA60LD40 is a medium to high power industrial-grade IGBT that is mostly used for inverter applications. With 80A collector current and 40mA gate current, this device is highly reliable and can be operated in a wide range of voltages and temperatures.
The specific data is subject to PDF, and the above content is for reference
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