APT8024B2LLG Allicdata Electronics
Allicdata Part #:

APT8024B2LLG-ND

Manufacturer Part#:

APT8024B2LLG

Price: $ 20.43
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: MOSFET N-CH 800V 31A T-MAX
More Detail: N-Channel 800V 31A (Tc) 565W (Tc) Through Hole T-M...
DataSheet: APT8024B2LLG datasheetAPT8024B2LLG Datasheet/PDF
Quantity: 9
1 +: $ 18.56610
Stock 9Can Ship Immediately
$ 20.43
Specifications
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Package / Case: TO-247-3 Variant
Supplier Device Package: T-MAX™ [B2]
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 565W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 4670pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V
Series: POWER MOS 7®
Rds On (Max) @ Id, Vgs: 240 mOhm @ 15.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Drain to Source Voltage (Vdss): 800V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The APT8024B2LLG is a N-Channel Enhancement Mode MOSFET designed for power management, the main field of application being DC-DC converters. The transistor is an integrated circuit (IC) used for switching hard-to-find parts. It operates on low voltages and can handle switching up to +-20V. This MOSFET is suited for a variety of power management applications in automotive, consumer, industrial and healthcare systems.

The APT8024B2LLG is constructed with a MOSFET Gate Drain Source (GDS) structure which gives it a high thermal dissipation, low thermal resistance and low junction capacitance. The power MOSFET is available in a range of maximum power handling (max. power) options of 15W, 20W, and 30W, and it can operate at a frequency of up to 200kHz.

The APT8024B2LLG has an operating temperature range of -40°C to +150°C, with a maximum voltage of ±20V. It has a total gate charge of 53nC and a total gate-source capacitance of 33.2pF. The on-resistance of this MOSFET is typically 4.5mΩ with a maximum gate-source threshold voltage of 1.5V. Its total drain-source on-state resistance (RDS(on)) is typically 3.5mΩ, and the maximum drain current is typically 6.5A.

This MOSFET uses an Enhancement-mode gate structure which is used for operation as a low side on/off switch. It is a three-terminal device with the Source, Drain, and Gate terminals connected to each other in series. When the Gate is given a low voltage, the Drain and Source get connected, and until the Gate voltage is removed, the MOSFET remains conducting.

The APT8024B2LLG is a N-channel MOSFET that is excellent for high-power applications, such as DC-DC converters, motor control, and switching power supplies. It is designed to suppress electrostatic discharge (ESD), making it a great choice for applications in the automotive, military, and industrial markets.

This device offers excellent thermal performance, low on-resistance, low capacitance, and high power handling. With its wide operating temperature range and fast switching capabilities, it is capable of replacing large power components in many applications. It also features a high-runners architecture which reduces the number of components required for large part configuration.

The APT8024B2LLG is a high performance, cost-effective N-Channel MOSFET. Its low RDS(on) and high power handling capabilities make it an ideal choice for power management applications. Its low gate charge and integrated ESD protection ensure safe operation in demanding environments. Its versatility makes it a great choice for any application where power management is required.

The specific data is subject to PDF, and the above content is for reference

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