
Allicdata Part #: | APT8075BN-ND |
Manufacturer Part#: |
APT8075BN |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | MOSFET N-CH 800V 13A TO247AD |
More Detail: | N-Channel 800V 13A (Tc) 310W (Tc) Through Hole TO-... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 1mA |
Package / Case: | TO-247-3 |
Supplier Device Package: | TO-247AD |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 310W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2950pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 130nC @ 10V |
Series: | POWER MOS IV® |
Rds On (Max) @ Id, Vgs: | 750 mOhm @ 6.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 13A (Tc) |
Drain to Source Voltage (Vdss): | 800V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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.APT8075BN is a high-performance depletion-mode n-channel MOSFET which is widely used for electronic switch applications. It has excellent thermal stability and low on-state resistance which makes it perfect for power management. This MOSFET has been specifically designed for applications that require high-efficiency and reliability.
APT8075BN is a single-die MOSFET which has been built using cutting-edge technology. It employs a proprietary process to create a low resistance path from drain to source. This ensures low power loss and increased efficiency. It also has a snapback-proof construction with excellent dV/dt immunity.
APT8075BN is a popular choice for many applications like power converters, motor drives and automotive applications. It is also used in AC/DC and DC/DC converters, computer system power management, and audio amplifiers. Most of these applications require the MOSFET to switch high current and voltage loads in short periods of time.
APT8075BN has an ON resistance of 0.27 mOhm and a threshold voltage of -1.6V, making it extremely reliable. The low VGS work better with higher device voltages and at lower power supply voltages. It has been designed with a breakdown voltage of 40V. It also has a Drain Current Rating of 80A (at 25°C). The combination of these features ensures that it is capable of handling applications that require higher current and low voltage drives, as well as lower current and higher voltage drives.
The working principle of APT8075BN is that when a voltage is applied to the gate of the MOSFET, it creates a voltage potential between the drain and the source. This in turn activates the channel, which allows electrical current to flow through the MOSFET and between the drain and the source. When the source and the drain are connected, and the gate is off, the MOSFET acts as an open Switch, blocking any current flow and allowing no electrical current to pass through it.
The APT8075BN is an efficient and reliable MOSFET that is suitable for many different applications. Its low RDSON and high Drain Current Rating make it ideal for switching high current and voltage loads in short periods of time. Its thermal stability and snapback-proof construction make it perfect for applications that require high-efficiency and reliability. This MOSFET can be used in many different applications, from power supply management to automotive systems.
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