APT8075BN Allicdata Electronics
Allicdata Part #:

APT8075BN-ND

Manufacturer Part#:

APT8075BN

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: MOSFET N-CH 800V 13A TO247AD
More Detail: N-Channel 800V 13A (Tc) 310W (Tc) Through Hole TO-...
DataSheet: APT8075BN datasheetAPT8075BN Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4V @ 1mA
Package / Case: TO-247-3
Supplier Device Package: TO-247AD
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 310W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2950pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V
Series: POWER MOS IV®
Rds On (Max) @ Id, Vgs: 750 mOhm @ 6.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Drain to Source Voltage (Vdss): 800V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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APT8075BN is a high-performance depletion-mode n-channel MOSFET which is widely used for electronic switch applications. It has excellent thermal stability and low on-state resistance which makes it perfect for power management. This MOSFET has been specifically designed for applications that require high-efficiency and reliability.

APT8075BN is a single-die MOSFET which has been built using cutting-edge technology. It employs a proprietary process to create a low resistance path from drain to source. This ensures low power loss and increased efficiency. It also has a snapback-proof construction with excellent dV/dt immunity.

APT8075BN is a popular choice for many applications like power converters, motor drives and automotive applications. It is also used in AC/DC and DC/DC converters, computer system power management, and audio amplifiers. Most of these applications require the MOSFET to switch high current and voltage loads in short periods of time.

APT8075BN has an ON resistance of 0.27 mOhm and a threshold voltage of -1.6V, making it extremely reliable. The low VGS work better with higher device voltages and at lower power supply voltages. It has been designed with a breakdown voltage of 40V. It also has a Drain Current Rating of 80A (at 25°C). The combination of these features ensures that it is capable of handling applications that require higher current and low voltage drives, as well as lower current and higher voltage drives.

The working principle of APT8075BN is that when a voltage is applied to the gate of the MOSFET, it creates a voltage potential between the drain and the source. This in turn activates the channel, which allows electrical current to flow through the MOSFET and between the drain and the source. When the source and the drain are connected, and the gate is off, the MOSFET acts as an open Switch, blocking any current flow and allowing no electrical current to pass through it.

The APT8075BN is an efficient and reliable MOSFET that is suitable for many different applications. Its low RDSON and high Drain Current Rating make it ideal for switching high current and voltage loads in short periods of time. Its thermal stability and snapback-proof construction make it perfect for applications that require high-efficiency and reliability. This MOSFET can be used in many different applications, from power supply management to automotive systems.

The specific data is subject to PDF, and the above content is for reference

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