APT80M60J

Vgs(th) (Max) @ Id:	5V @ 5mA
Package / Case:	SOT-227-4, miniBLOC
Supplier Device Package:	ISOTOP®
Mounting Type:	Chassis Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	960W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	24000pF @ 25V
Vgs (Max):	±30V
Gate Charge (Qg) (Max) @ Vgs:	600nC @ 10V
Series:	POWER MOS 8™
Rds On (Max) @ Id, Vgs:	55 mOhm @ 60A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	84A (Tc)
Drain to Source Voltage (Vdss):	600V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

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APT80M60J Application Field and Working Principle

APT80M60J is a high voltage, low gate threshold and high current power MOSFET transistor. MOSFET transistors accommodate an array of application fields and come in a variety of types and sizes. APT80M60J is a single MOSFET transistor, typically used for applications in the AC/DC conversion, electronic ballast, and computer power supply field among others.

MOSFET Application Field:

MOSFET transistors can be used in a wide array of applications, from low voltage and low current to high voltage and high current applications. Common application fields for MOSFET transistors include switching power supplies in audiovisual technology, telecommunications and appliances, controlling large motors, synchronous rectifiers, AC/DC or DC/DC power conversion, and power factor correction (PFC). APT80M60J transistors are specifically suitable for use in applications with high voltage, low gate threshold and high current requirements. Some specific applications of the APT80M60J transistor include AC/DC conversion, electronic ballast, and computer power supply.

Working Principle of the MOSFET Transistor:

MOSFET transistors work on the principle of manipulating charge carriers in the device with voltage in order to change the output. The term stands for the “metal-oxide-semiconductor field-effect transistor.” MOSFET transistors work by having a voltage applied to the gate, thus allowing carriers to enter the device. This manipulation of charge carriers is what allows for the change in the output based on the input. The amount of current that flows through the device is determined by the difference between the voltage applied to the gate and the voltage applied to the source—the output terminal of the device.The APT80M60J transistor works on the same principles as all MOSFET transistors, but is tailored to work in high voltage and high current applications while having low gate threshold.

Advantages of the APT80M60J Transistor:

The APT80M60J transistor has several advantages over other MOSFET transistors. Some of these advantages include:• High voltage – up to 800V• Low gate threshold – 1V/µs• High current – 80A• Low on-resistance – 0.08 ohms• Compact size – TO-247These advantages make APT80M60J the ideal choice for applications in the high voltage, low gate threshold and high current fields.

Conclusion:

MOSFET transistors are used in a wide variety of applications in the high voltage and high current fields, such as AC/DC conversion, electronic ballast, and computer power supply. The APT80M60J transistor is an ideal choice for these applications due to its high voltage, low gate threshold, high current. Compact size make it an ideal solution for many applications.

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