AS7C1024B-12TJCN

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AS7C1024B-12TJCN is a high-speed, low-power bipolar CMOS silicon CMOS static RAM, designed and fabricated with an advanced CAAC-MT semiconductor process that achieves highly reliable operation. It is ideal for memory storage applications requiring low power operation and little or no data latency.

AS7C1024B-12TJCN includes an asynchronous array of 1024K bits, organized as 128K x 8-bit cells. The access time of the device is 12ns, and the power supply requirement ranges between 4.5V and 5.5V. The device also features an AutomaticPower-Down mode, which reduces the device’s power consumption by automatically switching the device to a low-power mode when the device is inactive.

The working principle of AS7C1024B-12TJCN is based on a dynamic random access memory (DRAM) cell. It is composed of two storage elements: the transistor and the capacitor. The capacitor stores electric charges and acts as the data storage element, while the transistor acts as a switch for writing, reading, and clearing data. When the transistor is activated, the electric charges in the capacitor are passed to a data line, where it is read or written. When the transistor is deactivated, the electric charges in the capacitor are cleared.

AS7C1024B-12TJCN is suitable for a wide range of applications – such as video game consoles, industrial automation, embedded designs, and telecommunications equipment – where low power operation and fast access times are desired. The device is available in a range of packages that have been designed to be compatible with industry-standard surface mount processes, making it ideal for space-constrained applications.

The device offers a great combination of low power consumption, robust architecture, and high compatibility with industry standards. The Low-Power Auto-Power Down mode allows for even greater power savings and increased battery life, making it perfect for applications that require long battery life. The device’s 12ns access time ensures fast response times, and its industry-standard compatibility makes it an ideal choice for many applications.

In summary, AS7C1024B-12TJCN is an ideal choice for high-speed and low-power memory storage applications. Its low-power, robust architecture, fast access times and wide compatibility with industry standards make it a perfect solution for many embedded designs. The device’s automatic power-down mode also ensures that it remains power-efficient even when it is not in use, making it an ideal choice for applications requiring long battery life.

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