AS7C256A-12TCN

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AS7C256A-12TCN is a high performance CMOS static RAM chip designed by the reputed semiconductor company Advanced Semiconductor, Inc. The device features a 256K x 12 configuration, making it ideal for high speed memory applications. The memory array of the device is organized into a matrix of multiple address lines and data lines, allowing for easy expansion and customization of the memory array for increased data rate and data capacity. The device utilizes a multi-level Sense Amplifier and Control Logic architecture to ensure fast and reliable data access, and the ability to support a variety of address and data bus configurations.

The AS7C256A-12TCN is designed to be used in a variety of application fields such as data storage, video and audio memory, and embedded memory controllers. The device is well-suited for memory intensive applications including digital signal processing, image processing, and computer graphics. Its multi-level architecture allows it to efficiently access data, resulting in faster performance and increased data management and storage for both single and multi-level systems. By utilizing the AS7C256A-12TCN, users can create an expandable, and cost-effective memory system for their products.

The working principle of the AS7C256A-12TCN memory chip is based on the concept of a matrix of address and data lines. The device is organized into a matrix of multiple address lines, data lines, and control lines, allowing for easy expansion and customization of the memory array. The device features a multi-level sense amplifier and control logic architecture that enables fast and reliable data access, allowing it to support a variety of address and data bus configurations. The AS7C256A-12TCN also features programmable static write protection, allowing users to store data in a secured manner.

The memory array of the AS7C256A-12TCN is organized into a matrix of multiple address lines and two data lines. The memory cell array requires an address signal and a data signal to access stored data. The address signal is applied to the address bus of the device, which routes the address signal to the selected memory cell. The data signal is applied to the data bus, which routes the data signal to the selected memory cell. The data signal is then amplified and stored in the selected memory cell, providing users with access to the data.

The AS7C256A-12TCN is well-suited for a variety of memory applications due to its high performance, flexible architecture, and low cost. The multi-level architecture enables efficient data access, resulting in faster performance and increased data management and storage for both single and multi-level systems. Furthermore, the programmable static write protection allows users to store data in a secured manner. The AS7C256A-12TCN is ideal for high speed memory applications such as data storage, video and audio memory, and embedded memory controllers.

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