AS7C316096B-10BIN Allicdata Electronics
Allicdata Part #:

1450-1433-ND

Manufacturer Part#:

AS7C316096B-10BIN

Price: $ 15.37
Product Category:

Integrated Circuits (ICs)

Manufacturer: Alliance Memory, Inc.
Short Description: IC SRAM 16M PARALLEL 48TFBGA
More Detail: SRAM - Asynchronous Memory IC 16Mb (2M x 8) Parall...
DataSheet: AS7C316096B-10BIN datasheetAS7C316096B-10BIN Datasheet/PDF
Quantity: 1000
1 +: $ 13.97340
10 +: $ 13.01010
25 +: $ 12.86760
50 +: $ 12.54990
156 +: $ 11.01790
312 +: $ 10.64480
Stock 1000Can Ship Immediately
$ 15.37
Specifications
Series: --
Packaging: Tray 
Part Status: Active
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 16Mb (2M x 8)
Write Cycle Time - Word, Page: 10ns
Access Time: 10ns
Memory Interface: Parallel
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-LFBGA
Supplier Device Package: 48-TFBGA (6x8)
Description

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AS7C316096B-10BIN is a synchronous static random access memory (SRAM) chip manufactured by ON Semiconductor. It is a 16 Mb memory device with organization of one megawords (MW) x 16 words x 8 bits. The memory device is organized as 8,192 words x 64 bits with access time of 10 ns and cycle time of 10 ns. This chip is designed for high-speed applications in a variety of electronic products.

The AS7C316096B-10BIN is a Memory device that can be used products such as game consoles, set-top boxes, automotive systems, network infrastructure and other consumer electronics. It is an ideal solution for applications requiring the highest performance, low power and highly reliable data storage.

The AS7C316096B-10BIN uses its built-in write protect feature to prevent data corruption and enables top data protection. Its advanced circuitry also incorporates signal integrity protection and signal noise reduction circuits. This provides reliable data transfer in high frequencies, eliminates signal to noise interference and increases circuit longevity.

The AS7C316096B-10BIN is composed of several core components, including: a write buffer to store data before writing, an address counter to select the addresses for data transfer, and a register to store the data for transfer. Its built-in clock and data synchronizer ensure that all data is accurately transferred. The device also features an internal error detection circuit for error correction.

The device\'s power consumption is optimized by low-power operation modes, including self-refresh (SR) and Auto-chill modes. SR mode reduces power consumption by allowing refresh of only certain memory blocks, while Auto-chill mode saves power by reducing the rate of refresh and reduces switching noise. The device also supports multiple low-power IDLE modes, such as low-power IDLE and deep-power down modes.

The AS7C316096B-10BIN is designed to operate over a wide range of temperatures, from -40°C to +85°C, and includes power supply noise filtering to prevent data corruption. Its flexible memory architecture supports x16 and x8 signaling with read and write cycles. Additionally, the device supports XON/XOFF and EDO modes for faster operation.

The AS7C316096B-10BIN is an ideal Memory device for a variety of applications. With its high speed, low power consumption and its ability to operate over a wide temperature range, it provides reliable, cost effective and high performance storage solutions for any application.

The specific data is subject to PDF, and the above content is for reference

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