AS7C351232-10BINTR Allicdata Electronics
Allicdata Part #:

AS7C351232-10BINTR-ND

Manufacturer Part#:

AS7C351232-10BINTR

Price: $ 10.75
Product Category:

Integrated Circuits (ICs)

Manufacturer: Alliance Memory, Inc.
Short Description: IC SRAM 16M PARALLEL 90TFBGA
More Detail: SRAM - Asynchronous Memory IC 16Mb (512K x 32) Par...
DataSheet: AS7C351232-10BINTR datasheetAS7C351232-10BINTR Datasheet/PDF
Quantity: 1000
2000 +: $ 9.76528
Stock 1000Can Ship Immediately
$ 10.75
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 16Mb (512K x 32)
Write Cycle Time - Word, Page: 10ns
Access Time: 10ns
Memory Interface: Parallel
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 90-VFBGA
Supplier Device Package: 90-TFBGA (8x13)
Description

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AS7C351232-10BINTR is a type of memory that is commonly used in embedded systems. It is a synchronous dram (SDRAM) device that is used in a variety of applications that require increased speeds and higher densities. In this article we will discuss the application field and working principle of the AS7C351232-10BINTR.

The AS7C351232-10BINTR is a highly integrated device that is used in a variety of applications. It is commonly used in consumer electronics devices like digital television receivers, commercial digital cameras, digital video recorders, digital set-top boxes, and consumer digital audio players. It is also commonly used in medical equipment, industrial automation devices, military systems, and high performance computers.

The AS7C351232-10BINTR is a synchronous DRAM device that is designed for use in embedded systems. It is capable of providing high performance, low power consumption and high capacity levels for system designs. It is able to achieve these performance levels due to its advanced technology, which includes an advanced architecture that uses a highly efficient memory controller and an on-chip power management circuitry.

In addition to its highly efficient architecture, the AS7C351232-10BINTR also utilizes a unique memory array topology. This topology enables the device to achieve higher densities and higher speeds. The device also includes on-chip self-refresh circuitry, which allows the device to be powered down without losing any data. This feature allows the AS7C351232-10BINTR to provide low power consumption and high performance.

The AS7C351232-10BINTR is designed for use in embedded systems that require high performance, low power consumption and high capacity. It has been designed to provide reliable and cost-effective memory solutions for applications such as digital end-products, industrial control, communications, and medical systems. The device is also designed to be flexible and modular, allowing it to be configured for specific application requirements.

The AS7C351232-10BINTR is designed to work in a synchronous manner. This means that data is transferred between the device and the processor in synchronization with the processor\'s clock. This allows for higher data transfer rates and higher data storage capacity.

The AS7C351232-10BINTR also includes on-chip error correction, which ensures reliable data access and storage. The device supports error correction codes (ECCs), which are used to detect and correct errors that occur during data storage.

The AS7C351232-10BINTR is capable of providing high performance, low power consumption and high capacity levels for system designs. Its advanced technology, architecture and flexible and modular design make it an ideal choice for embedded systems that require increased levels of performance, reliability and cost-effectiveness.

The specific data is subject to PDF, and the above content is for reference

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