AUIRG4BC30SSTRL

Series:	--
Packaging:	Tape & Reel (TR)
Lead Free Status / RoHS Status:	--
Part Status:	Active
Moisture Sensitivity Level (MSL):	--
IGBT Type:	--
Voltage - Collector Emitter Breakdown (Max):	600V
Current - Collector (Ic) (Max):	34A
Current - Collector Pulsed (Icm):	68A
Vce(on) (Max) @ Vge, Ic:	1.6V @ 15V, 18A
Power - Max:	100W
Switching Energy:	260µJ (on), 3.45mJ (off)
Input Type:	Standard
Gate Charge:	50nC
Td (on/off) @ 25°C:	22ns/540ns
Test Condition:	480V, 18A, 23 Ohm, 15V
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:	D2PAK

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Introduction to AUIRG4BC30SSTRL

AUIRG4BC30SSTRL, also known as insulated gate bipolar transistors, are a type of single transistor device developed specifically for high-power switching applications like DC and AC motor control, automated machinery, and AC/DC power conversion. IGBTs offer high conduction performance, low losses, excellent noise immunity and good durability – helping them stand out from their power switching competitors.

Application Fields

IGBTs are widely used in power electronics applications, especially in high-power switching applications like AC/DC power conversion, motor control, and automated machinery. The AUIRG4BC30SSTRL is well suited for these applications and is typically used in elevator applications, such as traction motor drives and high-speed motor controls.In addition to elevators, AUIRG4BC30SSTRL are used in many industrial and consumer applications, including robotics, distributive power systems, HVAC, programmable logic controllers (PLCs), UPS, solar inverters, and more. Furthermore, IGBTs offer several advantages over their competitors in the high-power switching market, including higher switching speed, low turn-on losses, low gate drive power, and better temperature and voltage/current ratings.

Working Principle

Like any other transistor, IGBTs work on the three-terminal principle, a base, a collector, and an emitter. The base acts as the control terminal, while the emitter and the collector act as the output terminals. A current is applied to the base, which in turn controls the current flowing between the emitter and the collector. The AUIRG4BC30SSTRL is a combination of both bipolar and field-effect transistors, giving it unique characteristics.In contrast to bipolar transistors, IGBTs need very little bias current to turn them on, as long as the inputting current is strong enough. This allows for smoother switching and produces less heat when compared to its bipolar transistor counterpart. Additionally, the IGBTS offers better noise immunity than a MOSFET transistor, producing less switching noise.

Conclusion

The AUIRG4BC30SSTRL is an insulated gate bipolar transistor (IGBT) designed specifically for high-power switching applications. It offers several advantages over its competitors in the high-power switching market including higher switching speed, low turn-on losses, low gate drive power and high power handling capabilities. It is widely used in power electronics applications, such as AC/DC power conversion, motor control, automated machinery, ups, solar inverters, HVAC and PLCs. Thanks to its unique combination of bipolar and field-effect transistors, IGBTs require very low bias current to turn them on, allowing for smooth switching and less heat dissipation when compared to its competitors.

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