| Allicdata Part #: | AUIRGF65G40D0-ND |
| Manufacturer Part#: |
AUIRGF65G40D0 |
| Price: | $ 6.77 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | IGBT 600V 62A 625W TO247 |
| More Detail: | IGBT 600V 62A 625W Through Hole TO-247AD |
| DataSheet: | AUIRGF65G40D0 Datasheet/PDF |
| Quantity: | 1000 |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| 1 +: | $ 6.77250 |
| 10 +: | $ 6.56932 |
| 100 +: | $ 6.43388 |
| 1000 +: | $ 6.29843 |
| 10000 +: | $ 6.09525 |
| Power - Max: | 625W |
| Supplier Device Package: | TO-247AD |
| Package / Case: | TO-247-3 |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Reverse Recovery Time (trr): | 41ns |
| Test Condition: | 400V, 20A, 4.7 Ohm, 15V |
| Td (on/off) @ 25°C: | 35ns/142ns |
| Gate Charge: | 270nC |
| Input Type: | Standard |
| Switching Energy: | 298µJ (on), 147µJ (off) |
| Series: | CooliRIGBT™ |
| Vce(on) (Max) @ Vge, Ic: | 2.2V @ 15V, 20A |
| Current - Collector Pulsed (Icm): | 84A |
| Current - Collector (Ic) (Max): | 62A |
| Voltage - Collector Emitter Breakdown (Max): | 600V |
| IGBT Type: | -- |
| Moisture Sensitivity Level (MSL): | -- |
| Part Status: | Active |
| Lead Free Status / RoHS Status: | -- |
| Packaging: | Tube |
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I. Introduction
The AUIRGF65G40D0 is a modular type insulated gate bipolar transistor (IGBT) which is used for a wide range of applications. This IGBT has the capability to handle low on-state voltage drop and high current operation, and is suitable for applications ranging from motor control to power rectification in industrial and medical applications.
II. Application Field
The AUIRGF65G40D0 is mainly used in high power industrial applications such as motor control and power rectification. It can also be used for voltage regulation and power conversion in medical systems. This IGBT is particularly suited for high power applications due to its ability to handle high current, low voltage drop and high pulse current capability.
III. Working Principle
The AUIRGF65G40D0 is an IGBT based on a planar MOSFET structure. An IGBT uses the same gate voltage and control principles as a MOSFET but has a much lower gate-source leakage current and higher switching frequency, making it ideal for applications where high power switching is needed. The IGBT is a three terminal device that works by using an insulated gate to control the flow of current between the collector and emitter. When the gate voltage is below a certain threshold, the transistor is off and no current can flow, but when the gate voltage exceeds the threshold voltage, the transistor turns on and current can flow between the collector and emitter.
IV. Advantages
The main advantages of the AUIRGF65G40D0 are its ability to handle large currents and high pulse current capability. It has a relatively low on-state voltage drop, which makes it ideal for applications where power conversion and rectification are needed. It also has a high voltage tolerant gate and low gate leakage current, which makes it suitable for applications that require high switching speeds.
V. Conclusion
In conclusion, the AUIRGF65G40D0 is an IGBT which is suitable for a wide range of industrial applications such as motor control and power rectification. It has the capability to handle large currents and high pulse current capability, as well as a relatively low on-state voltage drop, making it ideal for applications that require power conversion and rectification.
The specific data is subject to PDF, and the above content is for reference
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AUIRGF65G40D0 Datasheet/PDF