AUIRGP4066D1-E

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The AUIRGP4066D1-E is a single IGBT, or Insulated Gate Bipolar Transistor. It is developed for use in applications such as motor control, welding , uninterruptible power systems and switched-mode power supplies. As an Insulating Gate Bipolar Transistor, it combines the best attributes of both MOSFET and BJT transistors. It works in a manner similar to a single MOSFET, and can provide both lower power consumption and increased efficiency compared to a single BJT.

The AUIRGP4066D1-E is a three-terminal device. The gate is the control terminal, the collector is the switching terminal, and the emitter is the low-voltage terminal. When a voltage is applied to the gate, it causes a current to flow between the collector and emitter, thus also creating a voltage between these terminals. This is known as the ‘forward-bias’ of the transistor. The collector-emitter voltage is known as the ‘saturation voltage’. Depending on the device, the maximum rated collector-emitter voltage (or breakdown voltage) may be different.

When no voltage is applied to the gate, it is known as the ‘reverse-bias’ of the transistor. This is generally when no current will flow between the collector and emitter. This makes the device ideal for use in applications where the load may be switched off or on by the controlling signal.

The AUIRGP4066D1-E has an excellent current conduction capability, achieving a maximum of 25amps at up to 100V. It is also temperature resistant, capable of operating in a range of -55 to +150 °C. Finally, it has a reverse-recovery time of 4ns, making it ideal for high speed applications requiring fast switching.

The AUIRGP4066D1-E is a single IGBT which is developed for use in motor control, welding, uninterruptible power systems and switched-mode power supplies. It can provide low power consumption and increased efficiency compared to a single BJT. It has a three-terminal device configuration with a gate, collector, and emitter and has a maximum rated collector-emitter voltage. It has an excellent current conduction capability up to 25amps at a maximum of 100V, and is temperature resistant up to -55 to +150 °C. Finally, it has a reverse-recovery time of 4ns, making it suitable for high speed applications.

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