AUIRLU3114Z

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The AUIRLU3114Z is a type of power MOSFET (metal–oxide–semiconductor field-effect transistor). It is designed to provide the circuit designer with all the advantages of a standard MOSFET but with increased operating performance. The design of this device uses advanced trench technology to provide superior RDS(ON), fast switching for maximum efficiency and optimized gate charge for low gate driving power. This MOSFET can be used in many applications, including motor control, pulse power, and DC-DC switching converters.

Features

The AUIRLU3114Z offers many beneficial features, including:

• Rich set of protection features, including over-voltage, over-temperature, over-current, and under-voltage
• Low threshold voltage
• Very low gate charge, resulting in high efficiency at high frequencies
• High current handling capability
• Good ESD protection
• Ultra low on-resistance
• Integrated desaturation protection

Applications and Working Principle

The AUIRLU3114Z is ideal for applications such as motor control, power switching, and DC-DC converters. It can also be used in high-frequency pulse applications and gate drive circuits. Its low drain-source on-resistance ensures the transistor can handle high currents with minimal losses, while its integrated desaturation protection prevents it from entering a permanent off-state during load transients.

The MOSFET operates using the principle of an insulated-gate field-effect transistor (IGFET). In this device, the source and drain contacts are formed on an n-type substrate and are connected by a conductive gate. The gate constitutes an insulated barrier between the source and drain, and when a suitable voltage is applied to the gate it creates a channel between the source and drain contacts. This channel allows electrons to flow from the source to the drain when a voltage is applied across them. The degree to which the conducting channel is formed is controlled by the voltage on the gate. This is known as the MOSFET\'s “on-state,” and when the voltage on the gate is zero, the MOSFET is in its “off-state.” The advantage of this type of transistor is its high current handling capabilities and low resistance to current flow when in its “on-state.”

In summary, the AUIRLU3114Z is a highly efficient, low-on-resistance power MOSFET designed for high-current applications. It offers great protection features, a low threshold voltage, and a high maximum current rating. Additionally, its fast switching capability and optimized gate charge provide for improved system efficiency and better overall performance.

The specific data is subject to PDF, and the above content is for reference