Allicdata Part #: | AUIRG4PH50S-ND |
Manufacturer Part#: |
AUIRG4PH50S |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | IGBT 1200V 57A 200W TO247AC |
More Detail: | IGBT 1200V 57A 200W Through Hole TO-247AC |
DataSheet: | AUIRG4PH50S Datasheet/PDF |
Quantity: | 50 |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Series: | -- |
Packaging: | Tube |
Lead Free Status / RoHS Status: | -- |
Part Status: | Active |
Moisture Sensitivity Level (MSL): | -- |
IGBT Type: | -- |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
Current - Collector (Ic) (Max): | 57A |
Current - Collector Pulsed (Icm): | 114A |
Vce(on) (Max) @ Vge, Ic: | 1.7V @ 15V, 33A |
Power - Max: | 200W |
Switching Energy: | 1.8mJ (on), 19.6mJ (off) |
Input Type: | Standard |
Gate Charge: | 167nC |
Td (on/off) @ 25°C: | 32ns/845ns |
Test Condition: | 960V, 33A, 5 Ohm, 15V |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-247-3 |
Supplier Device Package: | TO-247AC |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Since the advent of the transistor, the electronics industry has continued to explore interesting new ways and applications of this technology. One of the more recent and exciting advances is the AUIRG4PH50S, a high-performance, single-crystal insulated gate bipolar transistor (IGBT). The AUIRG4PH50S is a part of a larger family of IGBTs that are being increasingly used in many applications and industries.
The AUIRG4PH50S IGBTs are ideal for low-voltage applications due to their low conduction losses. Furthermore, they are capable of controlling high power levels with low switching losses. The low switching losses of the IGBTs make them the best choice when compared to other types of transistors in applications which demand high frequency operation and high switching speeds. Additionally, the IGBTs are well suited to applications where fast switching and low density are desired.
The AUIRG4PH50S IGBTs employ a special structure of the insulated gate that allows for the control of the voltage and current levels across the terminals. This allows for the IGBTs to be used as either a switch or a linear amplifier in applications that require either function. The IGBTs also possess superior thermal stability, which makes them well suited for applications that must work reliably under varying temperatures. Furthermore, the IGBTs are capable of achieving very high frequency operation due to their improved carrier life time.
The working principle of the AUIRG4PH50S IGBTs is that they use a gate voltage to control a semiconductor switch. When the gate voltage is applied, it forms a holding charge in the metal-oxide semiconductor layer, which attracts free electrons from the rest of the device. The free electrons form a conducting path from the source to the drain, allowing current to flow from the source to the drain. The amount of current allowed to flow between the source and the drain is determined by the gate voltage that is applied. By adjusting the gate voltage, the current conduction levels of the device can be regulated.
The AUIRG4PH50S IGBTs are being used in a variety of industries, including automotive, industrial control, and power conversion. In the automotive industry, the IGBTs are being used to control the speed of the vehicle and the performance of the engine. They are also being used in industrial control applications such as motor drivers and servo drives. Additionally, the AUIRG4PH50S IGBTs are being used in power conversion applications such as solar power generation and solar inverters.
The AUIRG4PH50S IGBTs provide many advantages over traditional power management technologies. They are extremely efficient and reliable, making them a preferred choice for many applications. Additionally, the IGBTs have minimal switching losses, allowing for higher efficiencies of power management systems. The versatility of the IGBTs in terms of applications make them a top choice for many industries and applications.
The specific data is subject to PDF, and the above content is for reference
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