AUIRGP50B60PD1E Allicdata Electronics
Allicdata Part #:

AUIRGP50B60PD1E-ND

Manufacturer Part#:

AUIRGP50B60PD1E

Price: $ 6.80
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: IGBT 600V 75A 390W TO247AD
More Detail: IGBT NPT 600V 75A 390W Through Hole TO-247AD
DataSheet: AUIRGP50B60PD1E datasheetAUIRGP50B60PD1E Datasheet/PDF
Quantity: 1000
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
1 +: $ 6.18030
10 +: $ 5.58495
100 +: $ 4.62395
500 +: $ 4.02646
Stock 1000Can Ship Immediately
$ 6.8
Specifications
Series: --
Packaging: Tube 
Lead Free Status / RoHS Status: --
Part Status: Active
Moisture Sensitivity Level (MSL): --
IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 75A
Current - Collector Pulsed (Icm): 150A
Vce(on) (Max) @ Vge, Ic: 2.85V @ 15V, 50A
Power - Max: 390W
Switching Energy: 255µJ (on), 375µJ (off)
Input Type: Standard
Gate Charge: 205nC
Td (on/off) @ 25°C: 30ns/130ns
Test Condition: 390V, 33A, 3.3 Ohm, 15V
Reverse Recovery Time (trr): 42ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AD
Description

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The AUIRGP50B60PD1E is a type of insulated gate bipolar transistor (IGBT), specifically a single IGBT device. IGBTs are a type of transistor which combines the best features of both bipolar and field-effect transistors. As opposed to BJTs (bipolar junction transistors), IGBTs are more suitable for higher-power applications due to their higher current and voltage ratings. IGBTs are also more efficient than BJTs, and have a much lower switching loss when compared to other types of transistors. The AUIRGP50B60PD1E is rated for a Vces of 600V, and an Ic of 50A.

The AUIRGP50B60PD1E can be used in a number of applications, such as power conversion and motor control. The device can be used in a wide range of power applications, including switching power supplies, AC motor control, renewable energy systems, server and storage systems, welding machines, and most other power conversion applications. The AUIRGP50B60PD1E also has a number of features which make it a good choice for these types of applications. These features include a low drift temperature rating, a fast switching speed, and a low gate charge.

The working principle of the AUIRGP50B60PD1E is essentially the same as any other IGBT. The device essentially acts as a combination of a BJT and an MOSFET, and combines the best features of both. The device contains two planar junctions, an emitter and collector junction, and an insulated gate. The gate is connected to a voltage which can be used to control the current flow between the collector and emitter junctions. By applying either a positive or negative voltage to the gate, the device can be made to either conduct or block current flow.

The AUIRGP50B60PD1E is an excellent choice for a number of power conversion and motor control applications. Its high current and voltage ratings make it suitable for a wide range of applications, while its low gate charge, low drift temperature rating, and fast switching speed make it a particularly good choice for these types of applications. Its simple working principle makes it easy to use and understand, and its combination of features make it an excellent device for power conversion and motor control.

The specific data is subject to PDF, and the above content is for reference

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