AUIRGP4062D1

Series:	--
Packaging:	Tube
Lead Free Status / RoHS Status:	--
Part Status:	Not For New Designs
Moisture Sensitivity Level (MSL):	--
IGBT Type:	Trench
Voltage - Collector Emitter Breakdown (Max):	600V
Current - Collector (Ic) (Max):	55A
Current - Collector Pulsed (Icm):	72A
Vce(on) (Max) @ Vge, Ic:	1.77V @ 15V, 24A
Power - Max:	217W
Switching Energy:	532µJ (on), 311µJ (off)
Input Type:	Standard
Gate Charge:	77nC
Td (on/off) @ 25°C:	19ns/90ns
Test Condition:	400V, 24A, 10 Ohm, 15V
Reverse Recovery Time (trr):	102ns
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-247-3
Supplier Device Package:	TO-247AC

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Introduction

An AUIRGP4062D1 is a type of transistor, specifically an insulated-gate bipolar transistor (IGBT). It is designed for medium-powered switch-mode power applications, such as those found in motor control, sophisticated automation and robotics, and lighting controls. This guide provides information about the application field of the AUIRGP4062D1, as well as its associated working principles.

Application Field of the AUIRGP4062D1

The AUIRGP4062D1 is a single IGBT, with a total current carrying capacity of up to 600 amps. With its hard-switching characteristics, low switching losses, and its anti-parallel free-wheel diode, the AUIRGP4062D1 is ideal for applications that require high switching speeds, such as motion control and robotics, as well as power conversion, inverters, and motor drive applications.

Working Principles of the AUIRGP4062D1

An IGBT is essentially a combination of two transistors: an N-channel MOSFET and a PNP bipolar junction transistor (BJT). The N-channel MOSFET acts as an insulating gate between the PNP BJT and the supply voltage.An IGBT works in much the same way as a MOSFET, but with two distinct differences. First, when an IGBT is rated for high current, the power gain from its base to the supply voltage is higher than that of a MOSFET. Second, the on-state voltage drop of an IGBT is typically much lower than that of a MOSFET.When the gate is switched on, holes are injected into the channel of the N-channel MOSFET, allowing current to flow from the emitter to the collector of the PNP BJT, and thus creating a closed circuit. The closed circuit between the MOSFET and the PNP BJT is what gives the transistor its current-carrying capacity. When the gate is switched off, the holes in the channel of the N-channel MOSFET disappear, and the current flow is stopped, thus allowing the IGBT to be shut off.The AUIRGP4062D1 is a single IGBT featuring a total current capacity of up to 600 amps, making it ideal for high-power applications such as motor control or robotics. The IGBT also features low switching losses and a free-wheeling diode, allowing it to be used in power conversion applications.

Conclusion

The AUIRGP4062D1 is a single IGBT designed for medium-powered switch-mode power applications. With its high current carrying capacity, low current on-state voltage drop, and its associated components, it is well suited for a wide range of power applications such as motor control, robotics, and power conversion. The working principle of the AUIRGP4062D1 is based on the combination of an N-channel MOSFET and a PNP BJT, with the former acting as an insulating gate between the two transistors.

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