| Allicdata Part #: | IRAUIRFS8408-ND |
| Manufacturer Part#: |
AUIRFS8408 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET N-CH 40V 195A D2PAK |
| More Detail: | N-Channel 40V 195A (Tc) 294W (Tc) Surface Mount D2... |
| DataSheet: | AUIRFS8408 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Gate Charge (Qg) (Max) @ Vgs: | 324nC @ 10V |
| Base Part Number: | IRFS8408 |
| Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package: | D2PAK |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 294W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 10820pF @ 25V |
| Vgs (Max): | ±20V |
| Series: | HEXFET® |
| Vgs(th) (Max) @ Id: | 3.9V @ 250µA |
| Rds On (Max) @ Id, Vgs: | 1.6 mOhm @ 100A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 195A (Tc) |
| Drain to Source Voltage (Vdss): | 40V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tube |
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The AUIRFS8408 is a 500V, 8A N-Channel MOSFET that is designed for low power loss and high efficiency in a wide range of applications. It is a high-speed switching device that is used in a variety of electrical and electronic devices such as power converters, DC-DC converters, electronic ballasts, solar panel controllers and many more.
The AUIRFS8408 is made of high-quality silicon, which is offered at a relatively low price point. The device has a maximum on-state resistance of 0.042 ohm and a maximum gate threshold voltage of 4.6V. It offers excellent performance in terms of switching speed and power efficiency due to its advanced technologies. The device is well-suited for high efficiency and high-reliability applications as it has a wide operating temperature range of -55°C to +150°C.
The working principle of an N-Channel MOSFET is based on the fact that when a positive voltage is applied to the Gate of the device, a concentration of electrons form in the surface of the channel and form a conducting channel connecting the Source and Drain. This creates an inversion layer which enables the device to conduct current from Drain to Source. The device is activated to the ON state when the Gate voltage exceeds the threshold voltage Vth of the device.
The AUIRFS8408 has a wide range of applications in automotive and industrial electronic systems. It can be used in power converters, DC-DC converters, electronic ballasts, switching regulators, motor control circuits, HVAC controls, household appliances and other applications. The device is suitable for high power drive applications due to its low RDS(on), high-frequency switching and high voltage capability.
In conclusion, the AUIRFS8408 is a low power, high-efficiency N-Channel MOSFET that can be used in a wide array of electronic devices. It offers excellent switching speed and power efficiency and has a wide operating temperature range. The device is suitable for high power drive applications due to its low RDS(on), high-frequency switching and high voltage capabilities.
The specific data is subject to PDF, and the above content is for reference
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AUIRFS8408 Datasheet/PDF