Allicdata Part #: | AUIRGSL4062D1-ND |
Manufacturer Part#: |
AUIRGSL4062D1 |
Price: | $ 4.33 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | IGBT 600V 59A 246W TO-262 |
More Detail: | IGBT Trench 600V 59A 246W Through Hole TO-262 |
DataSheet: | AUIRGSL4062D1 Datasheet/PDF |
Quantity: | 1000 |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
1 +: | $ 3.93750 |
10 +: | $ 3.55698 |
100 +: | $ 2.94487 |
500 +: | $ 2.56434 |
1000 +: | $ 2.23345 |
Series: | -- |
Packaging: | Tube |
Lead Free Status / RoHS Status: | -- |
Part Status: | Active |
Moisture Sensitivity Level (MSL): | -- |
IGBT Type: | Trench |
Voltage - Collector Emitter Breakdown (Max): | 600V |
Current - Collector (Ic) (Max): | 59A |
Current - Collector Pulsed (Icm): | 72A |
Vce(on) (Max) @ Vge, Ic: | 1.77V @ 15V, 24A |
Power - Max: | 246W |
Switching Energy: | 532µJ (on), 311µJ (off) |
Input Type: | Standard |
Gate Charge: | 77nC |
Td (on/off) @ 25°C: | 19ns/90ns |
Test Condition: | 400V, 24A, 10 Ohm, 15V |
Reverse Recovery Time (trr): | 102ns |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
Supplier Device Package: | TO-262 |
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AUIRGSL4062D1 is an Innovative IGBT (Insulated Gate Bipolar Transistor) designed to be a complete switching solution in a highly compact and dependable form. It has recently been adopted into various industries and applications that require reliable and energy efficient operation. This article will provide an overview of the application field and working principle of AUIRGSL4062D1.
Application Field
The AUIRGSL4062D1 is designed to be used in different applications where high-efficiency, high switching frequency and low losses are crucial. It features a low VCE(sat) voltage, short switching times and low inductive switching required for higher current paper control, motor speed control and high power inverters. It can also be used in solar inverters, wind turbine systems, LED lighting and high-efficiency general power conversion applications.
Since the device has a low VCE(sat) rating of 2.4V, it can drive higher power devices, motor control, and high-frequency switching which results in high efficiency and low heat dissipation. This enables AUIRGSL4062D1 to be used in a range of applications from industrial environments to home appliance.
Working Principle
The AUIRGSL4062D1 is an Insulated Gate Bipolar Transistor (IGBT). It is composed of a semiconductor body with an N-type emitter layer and a P-type base layer. The P-type base is connected to a metal oxide semiconductor (MOS) gate and is surrounded by an insulated gate oxide layer. The operation of the IGBT is based on the voltage applied to the insulated gate terminals.
When voltage is applied to the gate, an electric field is created which repels electrons from the base and allows them to flow from the emitter. The result is a forward biased PNP junction between base and emitter, and thus current begins to flow through the device. This process is reversible and the IGBT can be turned off by removing the gate voltage. By controlling the voltage applied to the gate, the forward voltage, as well as the amount of current flow through the device, is controlled.
The AUIRGSL4062D1 IGBT is designed to have an optimized performance at high frequencies and high currents. This is achieved by reducing the parasitic capacitances and inductances that are typical of this type of device. The optimized performance allows the device to be used in a variety of applications where the ability to switch quickly and efficiently is essential.
Conclusion
The AUIRGSL4062D1 IGBT is a high-performance device for switching applications where high-efficiency and low losses are paramount. It is suitable for a variety of applications such as motor control, high-frequency switching, and higher power devices. By reducing the parasitic capacitances and inductances, the device is able to optimize its performance at high frequencies and high currents. Its low VCE(sat) voltage, short switching times and low inductive switching make the device an ideal choice for reliable and energy efficient operation.
The specific data is subject to PDF, and the above content is for reference
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