Allicdata Part #: | AUIRGF66524D0-ND |
Manufacturer Part#: |
AUIRGF66524D0 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | IGBT 600V 60A 214W TO-247AC |
More Detail: | IGBT 600V 60A 214W Through Hole TO-247AD |
DataSheet: | AUIRGF66524D0 Datasheet/PDF |
Quantity: | 1000 |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Series: | -- |
Packaging: | Tube |
Lead Free Status / RoHS Status: | -- |
Part Status: | Active |
Moisture Sensitivity Level (MSL): | -- |
IGBT Type: | -- |
Voltage - Collector Emitter Breakdown (Max): | 600V |
Current - Collector (Ic) (Max): | 60A |
Current - Collector Pulsed (Icm): | 72A |
Vce(on) (Max) @ Vge, Ic: | 1.9V @ 15V, 24A |
Power - Max: | 214W |
Switching Energy: | 915µJ (on), 280µJ (off) |
Input Type: | Standard |
Gate Charge: | 80nC |
Td (on/off) @ 25°C: | 30ns/75ns |
Test Condition: | 400V, 24A, 10 Ohm, 15V |
Reverse Recovery Time (trr): | 176ns |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-247-3 |
Supplier Device Package: | TO-247AD |
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Overview of AUIRGF66524D0 Application Field and Working Principle
AUIRGF66524D0 is a single IGBT (Insulated Gate Bipolar Transistor) developed by International Rectifier. AUIRGF66524D0 is widely used in various application fields such as power supply, automation, welding, and industrial electronics. This advanced device provides low conduction losses, improved power density, and exceptional ruggedness.
Characteristics of IGBTs
IGBTs combine the fast on-state switching performance of a MOSFET and the high-current characteristics of a bipolar transistor. IGBTs are especially useful for power switching and control applications. Furthermore, IGBTs have several advantages over other power devices, such as low conduction losses, improved power density, and exceptional ruggedness. Generally, IGBTs are preferred to MOSFETs because of their better tolerance for short duration overloads, high immunity to dv/dt, lower gate drive power requirements, and higher temperature operation.
Applications of AUIRGF66524D0
The AUIRGF66524D0 is a single IGBT device that is well-suited for use in various power applications such as power supply, welding and industrial electronics. Furthermore, it is also suited for use in various automation and control applications where a wide range of current and voltage is required. In addition, the AUIRGF66524D0 is suitable for high power applications since it has a low conduction and switching losses.
How does AUIRGF66524D0 work?
The AUIRGF66524D0 has an insulated gate, which is constructed from layers of n and p-type materials. The n-type layer allows electrons to travel from the anode to the cathode, while the p-type layer allows holes to travel from the anode to the cathode. When the gate electrode is energized, a current flow is created, which switches the device on or off. The gate voltage determines the IGBT’s current-carrying capability. The AUIRGF66524D0 has a built-in collector-emitter voltage protection function that limits the device’s current in the case of an over voltage.
Conclusion
Overall, the AUIRGF66524D0 is a single IGBT with low conduction losses, improved power density, and exceptional ruggedness. It is suitable for various applications such as power supply, welding and industrial electronics, automation and control. AUIRGF66524D0 has an insulated gate and a built-in collector-emitter voltage protection function that limits the device’s current in the case of an over-voltage.
The specific data is subject to PDF, and the above content is for reference
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