Allicdata Part #: | AUIRFS4610-ND |
Manufacturer Part#: |
AUIRFS4610 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 100V 73A D2PAK |
More Detail: | N-Channel 100V 73A (Tc) 190W (Tc) Surface Mount D2... |
DataSheet: | AUIRFS4610 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 100µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 190W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3550pF @ 50V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 140nC @ 10V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 14 mOhm @ 44A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 73A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Discontinued at Digi-Key |
Packaging: | Tube |
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The AUIRFS4610 is a high-performance single N-channel MOSFET manufactured by International Rectifier. This device was designed to provide excellent performance in a wide range of applications, including power and load switch circuits, DC-DC converters, voltage regulator modules and the automotive industries. The device features high transconductance, fast switching speeds, and low RDS(on).
The AUIRFS4610 consists of one N-channel Enhancement mode depletion layer MOSFET that has been processed through International Rectifier’s advanced U-MOS-IV technology. This superior process allows for a superior level of performance in terms of gate charge, power dissipation, transconductance, and leakage currents. The device has extremely low gate-to-drain capacitance Cgd, gate-to-source capacitance Cgs, and gate-to-source on-state resistance Rds(on).
The working principle of the AUIRFS4610 involves the application of a voltage bias between the gate and source of the device. A voltage between 4.5V and 20V is applied to the gate which regulates the device’s current conduction through a field effect that modulates the drain current. As the gate voltage is increased, the field effect becomes stronger, allowing more electrons to flow through the channel and thereby increasing the drain current. Once the gate voltage reached the drain-source breakdown voltage (Vds(br)), the device becomes fully saturated, allowing maximum current to flow.
The AUIRFS46108 is suited for a wide range of applications, including power and load switch circuits, DC-DC converters, voltage regulator modules and the automotive industries. In a power switch application, the AUIRFS4610 is used to switch a load from a supply voltage. The device is switched on and off by applying the appropriate gate voltage, resulting in a fast, efficient switching cycle. In a DC-DC converter application, the device can be used to regulate the output voltage by modulating the drain current. Furthermore, the device can be used as a voltage regulator in automotive applications as it is well suited to suppress voltage pulses and provide more stable voltage levels. Finally, the device can also be used in other power switching applications where high switching frequencies and fast switching times are required.
In summary, the AUIRFS4610 is a single N-channel MOSFET device manufactured by International Rectifier. The device features very low gate-to-drain capacitance, gate-to-source capacitance, and gate-to-source on-state resistance. It is ideal for use in power and load switch circuits, DC-DC converters, voltage regulator modules and the automotive industries due to its high switching speed, fast switching time and excellent gate control characteristics.
The specific data is subject to PDF, and the above content is for reference
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