Allicdata Part #: | AUIRLR2905-ND |
Manufacturer Part#: |
AUIRLR2905 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 55V 42A DPAK |
More Detail: | N-Channel 55V 42A (Tc) 110W (Tc) Surface Mount D-P... |
DataSheet: | AUIRLR2905 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | D-Pak |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 110W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1700pF @ 25V |
Vgs (Max): | ±16V |
Gate Charge (Qg) (Max) @ Vgs: | 48nC @ 5V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 27 mOhm @ 25A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 42A (Tc) |
Drain to Source Voltage (Vdss): | 55V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Discontinued at Digi-Key |
Packaging: | Tube |
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The AUIRLR2905 is a type of field-effect transistor (FET) that uses metal-oxide-semiconductor technology. It is a member of the single transistor class, specifically a MOSFET, and it can be used for a wide range of applications. The device offers high performance in terms of its gate drive capability, gate protection, high-speed switching, and its low basic gate capacitance. In order to understand the working principle of the AUIRLR2905, it is first important to gain an understanding of the basic science of FETs.
A field-effect transistor is a three terminals integrated device that is composed of two gates and one source. One of the gates is the source or source pin, the other is the gate pin. The FET operates by using an electric field to control current flow between the source and the drain. Specifically, the voltage connected to the gate pin will cause the charge carriers, primarily electrons, to collect around the gate. When the gate is charged with a high enough voltage, a band of charge carriers will be created, allowing the current flow between the source and the drain to be controlled.
In the AUIRLR2905, the metal-oxide-semiconductor technology is used to allow for higher switching speeds as well as a protection capability for the device. It uses a metal-oxide-semiconductor gate structure, which is a layer of metal oxide material that is deposited onto the gate, allowing it to control the conductance of the device. The metal oxide material acts as a gate dielectric and is capable of controlling the current flow between the source and the drain. Additionally, the metal oxide layer acts as a gate protector, limiting gate current while allowing gate voltage to control the device’s output.
The AUIRLR2905 also offers high switching speed. This is achieved by using a low basic gate capacitance, meaning that the device can guide higher voltage changes through the switching process faster. This allows the device to switch at higher speeds, resulting in improved performance. Additionally, the AUIRLR2905 is also capable of providing a high gate drive capability which helps to reduce switching losses.
The AUIRLR2905 can be used in a variety of applications such as power switching, gate drive, and protection circuitry. The device is capable of controlling current flows of up to 7.5A, and its high-speed switching capabilities make it ideal for switching power applications. Additionally, the device’s gate protection and gate drive capabilities make it suitable for use in gate drive, protection, and other applications.
In conclusion, the AUIRLR2905 is a single MOSFET transistor with a wide range of potential applications due to its gate protection, high-speed switching, and low basic gate capacitance. It is capable of controlling current flows of up to 7.5A and can be used in power switching and other applications. By understanding the working principle of the device, users can maximize its potential and benefit from its advantages.
The specific data is subject to PDF, and the above content is for reference
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