AUIRF2907ZS7PTL Allicdata Electronics
Allicdata Part #:

AUIRF2907ZS7PTL-ND

Manufacturer Part#:

AUIRF2907ZS7PTL

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 75V 180A D2PAK-7
More Detail: N-Channel 75V 180A (Tc) 300W (Tc) Surface Mount D2...
DataSheet: AUIRF2907ZS7PTL datasheetAUIRF2907ZS7PTL Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-263-7, D²Pak (6 Leads + Tab), TO-263CB
Supplier Device Package: D2PAK (7-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 300W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 7580pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 3.8 mOhm @ 110A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Drain to Source Voltage (Vdss): 75V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The AUIRF2907ZS7PTL is a state-of-the-art field-effect-transistor (FET) that can be used to control a variety of electronic devices, such as motor drives, amplifiers and motor controls. The FET has many features that make it suitable for a wide range of applications. It is available in a surface mount package, which makes it easy to install and provides excellent thermal dissipation. The AUIRF2907ZS7PTL is a single N-channel FET with a maximum Drain-Source voltage of 500V and a gate current rating of 100mA.

The AUIRF2907ZS7PTL FET has a wide range of applications. It can be used to control high power items such as large DC motors, high power amplifiers and high-power switching applications. It is also used for low-powered applications, such as low-level amplifier stages, pulse-width modulation, small DC motors and simple switching applications. The FET’s design allows for very low on- and off-resistance, which makes it suitable for operations that require high and low control levels. Its size, shape and ease of mounting make it one of the most popular FETs available.

The working principle of the AUIRF2907ZS7PTL is based on the flow of electric current in a semiconductor material. A FET is a type of transistor that operates by controlling the electric current that flows through it. FETs are similar to a switch, and can be used to control the flow of current in devices or circuits. The FET has three terminals, the gate, source and drain. When a voltage is applied to the gate, it creates an electric field around it which controls the amount of current that can flow from the source to the drain. The amount of current that is allowed to flow through the transistor is determined by the magnitude of the voltage applied to the gate.

The AUIRF2907ZS7PTL has a high breakdown voltage, high power and low on-resistance which makes it suitable for applications that require fast switching speeds and high power control. It has a very low on-state resistance of 12 milliohm, which makes it ideal for use in high power and high performance applications. The FET has a wide range of operating temperature, which can range from -55 to +150 degrees Celsius. This range makes it suitable for use in a variety of industrial and consumer electronics.

The AUIRF2907ZS7PTL is a reliable and robust FET that is suitable for a wide range of applications. It has a high breakdown voltage and low on-state resistance, which make it suitable for high power and high performance applications. The FET has a wide range of operating temperatures, which makes it ideal for use in a variety of industrial and consumer electronics. The AUIRF2907ZS7PTL is a single N-channel FET, which makes it suitable for use in low-level amplifier stages, pulse-width modulation, small DC motors and simple switching applications.

The specific data is subject to PDF, and the above content is for reference

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