AUIRLR2905Z

Vgs(th) (Max) @ Id:	3V @ 250µA
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:	D-Pak
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	110W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1570pF @ 25V
Vgs (Max):	±16V
Gate Charge (Qg) (Max) @ Vgs:	35nC @ 5V
Series:	HEXFET®
Rds On (Max) @ Id, Vgs:	13.5 mOhm @ 36A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	42A (Tc)
Drain to Source Voltage (Vdss):	55V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Discontinued at Digi-Key
Packaging:	Tube

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The AURILR2905Z is a N-Channel enhancement type MOSFET transistor, which is primarily used for applications such as power switching and audio amplification. It is a versatile transistor that offers many advantages over other types of transistors such as low on-state resistance, high speed switching, and low power consumption.

The device is designed to provide a large number of reliable current paths in a relatively small space. This device is also designed to be highly resistant to electrical over-stress which can cause excessive current leakage, ultimately leading to device failure.

The AURILR2905Z is composed of three parts, the drain, source and gate. The device is constructed using an insulated gate process and a dielectric channel between source and drain. It has a channel length of 1.5μm, a voltage-to-drain current (VDS) of 200V, and drain current of 50A.

The working principle of this device is based on electronic charge transfer. When a voltage is applied to the gate, it will induce a displacement of electric charges through the insulation or integrated oxide layer between the source and the drain. This electric charge displacement creates an electric field that allows electric current to flow from the source to the drain.

The AURILR2905Z is typically used in applications such as switching DC-DC converters, power electronic circuits, high-speed switching and audio amplifiers. This device is also widely used in automotive, consumer, industrial and instrumentation applications.

The device can handle high voltages and is also good for high-power applications. It is designed to be reliable and durable, and is capable of high power switching and other applications where reliability and performance are important. The device is also relatively easy to use and is compatible with existing devices in most existing systems.

It is important to note that the device is sensitive to high voltages and can be damaged if used incorrectly. It is therefore important to use the recommended operating conditions as specified in the AURILR2905Z datasheet. Additionally, the device should be operated within its specified power limits and the associated protection circuit should be in place to prevent any damage to the device.

In conclusion, the AURILR2905Z is a versatile and reliable N-Channel enhancement type MOSFET transistor designed for power switching, audio amplification and other applications requiring high performance. The device offers a number of advantages over other transistors, including low on-state resistance, high speed switching, and low power consumption. It is also designed to be highly reliable and is capable of withstanding high power levels. Additionally, it is relatively easy to use and is compatible with existing devices in most existing systems, making it a great choice for a wide range of applications.

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