AUIRL1404ZSTRL

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Introduction

AUIRL1404ZSTRL is a single P-channel enhanced voltage MOSFET (EVMOSFET) with improved drain-source breakdown voltage and drain current as well expand gate-source voltage (VGS). It is a highly reliable semiconductor device, widely used in a wide range of applications. This article will provide an insight into the application field and its working principle.

Application field

AuIRL1404ZSTRL can be used in a wide range of applications that require high speed, high frequency and low power dissipation. It is particularly suitable for applications where device needs to switch quickly, such as switching mode power supplies. It is an ideal choice for power amplifiers, power converters, switch mode DC-DC converters, DC motor control and switching application, RF and IF circuits, because of its low on-resistor, fast recovery time and high breakdown voltage. It also can be used in various audio and video systems, such as high-end headphones, sound systems, and headsets. In addition, the device can be used in the real-time navigation, GPS and robots system.

Working Principle

AuIRL1404ZSTRL is a butipolar transistor, built from N-doped silicon substrate and two terminals, the source and the drain. The working image of the device is illustrated in below.

The source and drain are other type of materials, doped with opposite impurities. The entire structure is isolated with a gate, simply provided by a metal plate. When a voltage is applied between the gate and source, a depletion layers forms between the source and drain. This depletion layer acts as a resistor. When the gate voltage increases, the width of the depletion layer decrease. A lower resistance is obtained, creating an inversion layer close to the source and drain and conducting electric current between them. This conduction process makes use of the electrons and holes (the majority carriers in this region), that are the charges responsible for the current. In the conduction mode, the transconductance is typically proportional to the drain current.

The breakdown voltage of AuIRL1404ZSTRL device is typically about 44V, with a maximum value of 55V. It also provides a low on-resistance of 2.2Ω, a maximum drain current of 14A and a maximum power dissipation of 250W. This makes the device applicable for a wide range of power control applications, such as switching mode power supplies, DC motor control, and high power amplifiers. The device also provides a fast recovery time, with a maximum of 20ns at 25oC, making it ideal for high speed applications.

Conclusion

AuIRL1404ZSTRL is a single P-channel enhanced voltage MOSFET (EVMOSFET). It is suitable for switching mode power supplies, DC motor control and high power amplifiers. It also can be used in various audio and video systems, such as high-end headphones, sound systems, and headsets. In addition, the device has a maximum breakdown voltage of 55V, a low on-resistor of 2.2Ω, a maximum drain current of 14A and a power dissipation of 250W. It also has fast recovery time of 20ns at 25oC, making it an ideal choice for high speed applications.

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