AUIRFS8403TRL Allicdata Electronics
Allicdata Part #:

IFAUIRFS8403TRL-ND

Manufacturer Part#:

AUIRFS8403TRL

Price: $ 0.95
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 40V 123A D2PAK
More Detail: N-Channel 40V 123A (Tc) 99W (Tc) Surface Mount D2P...
DataSheet: AUIRFS8403TRL datasheetAUIRFS8403TRL Datasheet/PDF
Quantity: 1000
1 +: $ 0.95000
10 +: $ 0.92150
100 +: $ 0.90250
1000 +: $ 0.88350
10000 +: $ 0.85500
Stock 1000Can Ship Immediately
$ 0.95
Specifications
Vgs(th) (Max) @ Id: 3.9V @ 100µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 99W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 3183pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 93nC @ 10V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 70A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 123A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The AUIRFS8403TRL is an N-Channel Power MOSFET. It is an advanced technology MOSFET which has been designed to provide superior performance and superior system cost savings through a design that enhances energy efficiency and reduces component count. This device is a single N-channel device, with a Logic Level Gate. It is designed for surface mount applications and is offered in TO-220 and TO-263 packages.

The AUIRFS8403TRL has a Max Continuous Drain Source Voltage rating of 150V and an RDS(ON) Max of just 11mΩ. It is capable of handling up to 14.3A of current. It has an avalanche rating of 100A and a reverse breakdown voltage of 120V. The device has an operating temperature range of -55C to 150C and an on-state resistance (RDS(ON)) of 11mΩ max.

The AUIRFS8403TRL has a number of distinct advantages over conventional MOSFETs. This includes a high speed switching capability, excellent thermal performance, and low gate driving voltage requirements. It also exhibits a steep knee on its static drain-source resistance characteristic which allows a low on-state resistance (RDS(ON)).

The AUIRFS8403TRL is particularly well suited for use in applications where low gate drive voltage, high current, and low thermal resistance are required. These applications include switching, high frequency switching, high power switching, power conversion, DC-DC converters, motor drivers, and power management. It is also well suited for use in switched mode power supplies, rectifiers, and other power management applications where synchronous rectification is involved.

The working principle of the AUIRFS8403TRL is simple. When the gate-source voltage is below the threshold voltage (VGS(th)), the MOSFET is turned off and exhibits an extremely high impedance. However, when the gate-source voltage is increased above the threshold voltage (VGS(th)), the MOSFET is turned on and the drain current can flow. With an appropriate gate-source voltage, the MOSFET can be switched to provide a nearly infinite range of drain current. Thus, by controlling the gate-source voltage, the drain current of the MOSFET can be controlled to provide an output voltage.

In summary, the AUIRFS8403TRL is a single N-Channel Power MOSFET designed for applications requiring low gate drive voltage, high current, and low thermal resistance. Its high speed switching capability, excellent thermal performance, and low gate driving voltage requirements make it ideal for a wide range of applications including power conversion and switching, high frequency switching, and power management. The working principle of the device is straightforward and easy to understand, allowing it to be easily integrated into a wide variety of applications.

The specific data is subject to PDF, and the above content is for reference

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