Allicdata Part #: | AUIRLL024Z-ND |
Manufacturer Part#: |
AUIRLL024Z |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET NCH 55V 5A SOT223 |
More Detail: | N-Channel 55V 5A (Ta) 1W (Ta) Surface Mount SOT-22... |
DataSheet: | AUIRLL024Z Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | TO-261-4, TO-261AA |
Supplier Device Package: | SOT-223 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 380pF @ 25V |
Vgs (Max): | ±16V |
Gate Charge (Qg) (Max) @ Vgs: | 11nC @ 5V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 60 mOhm @ 3A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 5A (Ta) |
Drain to Source Voltage (Vdss): | 55V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The AUIRLL024Z is a form of single MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor), which is utilized for various automation applications. These applications include switch-mode power supplies, motor control, and high-frequency power conversion, as well as active filtering and signal conditioning.
A MOSFET consists of an insulated gate, which is used to control current between two terminals (source and drain). The term “field-effect transistor” refers to the way in which the gate can manipulate the electrical current flowing between the source and the drain.
The primary advantage of using MOSFETs is their low ON resistance and the ability to turn off when low voltage is applied to the gate. This low voltage control helps to reduce the complexity and cost of the system, while providing a high-efficiency operation. Additionally, MOSFETs also have a very low capacitance, which allows them to be used in high frequency designs.
The AUIRLL024Z is a N-channel MOSFET, which means that the current flow is into the source, and out of the drain, when the gate is positively charged. This type of device is ideal for applications that require high current conduction, such as switch-mode power supplies. The AUIRLL024Z has a very low Total Gate Charge (Qgd) and a very low input capacitance (Ciss), which makes it suitable for a range of low-power applications.
The working principle of the AUIRLL024Z is based on the mechanism of field-effect switching. A potential difference is applied to the gate terminal, which causes a small electric field and a voltage drop across the gate-drain channel. This voltage, then, affects the channel electron concentration, which in turn, affects the current between the source and the drain.
When the gate voltage is low, the current conduction between the source and the drain decreases. When the gate voltage is high, the current conduction increases. Thus, the AUIRLL024Z utilizes the principle of field-effect switching to control the current conduction between the source and the drain. The AUIRLL024Z has a gate voltage range from -4 to +12 volts and a drain-source voltage range from -10 to -200 volts.
The AUIRLL024Z is a very versatile MOSFET, which is suitable for a wide range of applications. These applications include switch-mode power supplies, motor control, and high-frequency power conversion, as well as active filtering and signal conditioning. The device has a good thermal stability and a high efficiency, which makes it suitable for many different applications.
The specific data is subject to PDF, and the above content is for reference
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