Allicdata Part #: | AUIRF1324-ND |
Manufacturer Part#: |
AUIRF1324 |
Price: | $ 1.71 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 24V 195A TO220AB |
More Detail: | N-Channel 24V 195A (Tc) 300W (Tc) Through Hole TO-... |
DataSheet: | AUIRF1324 Datasheet/PDF |
Quantity: | 1000 |
1000 +: | $ 1.54022 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 300W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 7590pF @ 24V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 240nC @ 10V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 1.5 mOhm @ 195A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 195A (Tc) |
Drain to Source Voltage (Vdss): | 24V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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AIRF1324 is a high voltage MOSFET application field with high current, low forward voltage and low gate drive power requirements. It is designed to be used in a wide variety of applications. The MOSFET is capable of providing continuous currents up to 24A and is able to withstand power dissipation of more than 1.5W. The AIRF1324 is suitable for desensitized high speed switch mode power supplies and DC-DC converters as well as for driving large loads such as IGBTs. It is also suitable for high voltage switch mode power supplies applications and high power RF applications.
The AIRF1324 is a single N-channel enhancement mode MOSFET. It is equipped with an extended drain-source voltage and a separate gate-source voltage high current capability which is much higher than the average MOSFET and is built with a unique latch-up protected construction. In addition, it has a fast switching speed and an overvoltage protected internal structure.
The working principle of AIRF1324 is relatively simple. When a positive voltage is applied to the gate (while the source is grounded), the barrier between the source and the drain breaks down, creating an electric current pathway between the two points. This enables current to flow between thesource and the drain, allowing a voltage to be developed across it. Also, the gate-drain capacitance is minimized due to the large Miller effect. Thus, fast switching speeds of the MOSFET are achieved.
In addition, the AIRF1324 has an extensive drain-source blocking voltage range from 0 Volts to 800 Volts. This makes it ideal for use in high voltage applications. Furthermore, the MOSFET offers excellent on-state resistance and very low input capacitance which minimize conduction losses, resulting in maximum performance and efficiency in power switch applications.
The AIRF1324 also features a high input impedance and a low Miller effect, which makes for excellent transient response and makes it suitable for use in high speed switching circuits. Moreover, the MOSFET offers increased immunity from destruction due to excessive gate-source voltage, short circuits between gate and source, and electrostatic discharge. All of these features make it an excellent choice for use in applications such as motor control, switching power supplies, DC power supplies, and load switches.
The AIRF1324 is an excellent choice for high current applications due to its high current capability and its gate drive power requirements. Moreover, it provides low input capacitance, excellent on-state resistance, high voltage blocking capability, and solid protection against overvoltage, short circuit, and electrostatic discharge making it a great choice for use in a variety of applications. In summary, the AIRF1324 is a single N-channel enhancement mode MOSFET with an extended drain-source voltage, fast switching speed, low gate-drain capacitance, high input impedance, and low Miller effect making it highly suitable for high speed switching applications.
The specific data is subject to PDF, and the above content is for reference
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