BC807-16W-7

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	PNP
Current - Collector (Ic) (Max):	500mA
Voltage - Collector Emitter Breakdown (Max):	45V
Vce Saturation (Max) @ Ib, Ic:	700mV @ 50mA, 500mA
Current - Collector Cutoff (Max):	100nA
DC Current Gain (hFE) (Min) @ Ic, Vce:	100 @ 100mA, 1V
Power - Max:	200mW
Frequency - Transition:	100MHz
Operating Temperature:	-65°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	SC-70, SOT-323
Supplier Device Package:	SOT-323
Base Part Number:	BC807

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BC807-16W-7 Application Field and Working Principle

BC807-16W-7 is a type of bipolar junction transistor (BJT), also called a single laterally diffused metal oxide semiconductor (LDMOS) transistor. It is a power transistor used mainly in the computing, industrial, and automotive electronics markets. This article will discuss the application field and working principle of BC807-16W-7.

Application Field

The BC807-16W-7 is primarily used in computing, industrial and automotive electronic applications. In computing applications, the BC807-16W-7 can be used to power a microprocessor or device such as a hard drive controller, monitor controller, video card, graphics card, etc. In industrial applications, theBC807-16W-7 can be used to power automation, semiconductor manufacturing, medical instruments, and communications equipment. In automotive applications, the BC807-16W-7 is used to power car radios, CD changers, power systems, navigation systems, etc.

Working Principle

The BC807-16W-7 is a single laterally diffused MOS (LDMOS) transistor. It is composed of four main components: an emitter, a base, a collector and a substrate. The emitter is the electrode on the NPN side of the transistor that injects charge carriers into the base region. The base is the middle region between the emitter and collector, and it is composed of positive N-type and negative P-type charge carriers. The collector is the electrode on the PNP side of the transistor which collects the charge carriers injected from the emitter. The substrate is a semiconductor wafer that acts as a foundation for the other components.When a signal is applied to the base of the BC807-16W-7, it causes a small current to flow through the transistor, allowing a larger current to flow from the collector to the emitter. This process is called current amplification. The base current amplifies the emitter-collector current and allows the transistor to act as a switch, allowing the current to flow between the collector and emitter when the base current is high. When the base current is low, the current is cut-off between the collector and emitter, acting as an open switch. The BC807-16W-7 is a pnp type of transistor and it typically has a current gain (beta) between 10 and 100.

Conclusion

The BC807-16W-7 is a single laterally diffused MOS transistor. It is composed of four main components—an emitter, a base, a collector, and a substrate. It is primarily used in computing, industrial and automotive electronic applications. The BC807-16W-7 is a pnp type of transistor and it typically has a current gain (beta) between 10 and 100. This type of transistor acts as a switch, allowing the current to flow between the collector and emitter when the base current is high and cutting off the current when the base current is low.

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