BC848C RFG

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	NPN
Current - Collector (Ic) (Max):	100mA
Voltage - Collector Emitter Breakdown (Max):	30V
Vce Saturation (Max) @ Ib, Ic:	500mV @ 5mA, 100mA
Current - Collector Cutoff (Max):	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	420 @ 2mA, 5V
Power - Max:	200mW
Frequency - Transition:	100MHz
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	SOT-23

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The BC848C RFG is an NPN-type, general-purpose bipolar junction transistor (BJT) manufactured by NXP Semiconductors. It is specifically designed as an RF amplifier, and is optimized for use as an RF power device in radio transmission applications.The BC848C RFG has a wide field of application, as it offers high linearity and gain, as well as strong current capability. It is the ideal choice for a wide range of wireless applications, such as remote-controlled toys, two-way radios, navigation systems and wireless modems.This transistor is also ideal for demanding RF and IF applications, such as linear amplifiers, wideband amplifiers and low-noise amplifiers. The BC848C RFG is rated maximum power of up to 500 mW and has excellent switching properties, making it an ideal choice for switching and digital applications as well.The BC848C RFG is composed of a silicon crystal, P-region and N-region. Its operating voltage is typically 30 - 80 volts, with a collector current of 550 mA and a maximum collector emitter voltage of 15V. The ability to handle high current is the key feature of this device, and it is designed with a collector-emitter breakdown voltage of 175V. The device also has a collector-base breakdown voltage of 200V and an emitter-base breakdown voltage of 7V.The working principle of the BC848C RFG is based on the formation of a current path between the collector and emitter electrodes which allows electrons to move from the emitter towards the collector. The movement of the electrons is facilitated by utilizing the principle of diffusion and drift. The electrons are under the influence of the electric field created by a voltage applied across the base-emitter junction. When the voltage on the base is increased, current flow increases due to the increasing number of electrons moving from the emitter to the collector.The BC848C RFG advantages include its efficiency, its reliability and its flexibility. This device is highly efficient and can handle a wide range of applications, from low- to high-power. It\'s also highly reliable and its low-noise operation make it suited for noise-sensitive applications. The device\'s flexibility makes it suitable for a variety of applications, from linear- to high-power.In conclusion, the BC848C RFG is an excellent choice for RF and IF applications requiring strong linearity and power. Its wide operating voltage and excellent switching properties are ideal for a variety of applications, making it a highly reliable and efficient device.

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