BC847B-13-F

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	NPN
Current - Collector (Ic) (Max):	100mA
Voltage - Collector Emitter Breakdown (Max):	45V
Vce Saturation (Max) @ Ib, Ic:	600mV @ 5mA, 100mA
Current - Collector Cutoff (Max):	15nA
DC Current Gain (hFE) (Min) @ Ic, Vce:	450 @ 2mA, 5V
Power - Max:	310mW
Frequency - Transition:	300MHz
Operating Temperature:	-65°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	SOT-23

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The BC847B-13-F is part of the NPN complimentary Silicon Transistors family and falls into the Bipolar (BJT) Single category. This type of single transistor is typically used as a small-signal switching and amplifier. It is also a reliable and cost effective option for amplifying or switching their application fields, making this type of transistor suitable for low-power and high-frequency amplification applications.This type of transistor has a gain range of 400 to 700, making it ideal for applications where linearity and low power consumption are required. Its small size and low cost make it perfect for use in low-power digital circuits, such as in television sets, cellular phones, and PDAs. As such, the BC847B-13-F is a great choice for general purpose amplification applications. The BC847B-13-F is manufactured using N-type Silicon material and has its collector-emitter breakdown voltage beyond 50 volts. This type of transistor also has its maximum emitter-base voltage of 5 volts, while the maximum collector current is at 0.2 amps. It can also handle a maximum current gain of 800. The working principle of the BC847B-13-F is based on the principles of electrical current regulation. It acts as an electronic switch, blocking or allowing current to flow, depending on the base voltage level and the current gain characteristics. The base voltage level is the control input, and the current gain characteristics refer to the ratio between the collector current and the base current. When the base voltage level is greater than the base-emitter voltage, the BC847B-13-F will be switched on, thus allowing current to flow in the circuit. Once the current reaches a certain level, the voltage on the collector will cause the transistor to switch off, thus slowing or blocking the current and preventing an overload or damage to the circuit. The reverse is also true when the base voltage is lower than the base-emitter voltage. This causes the transistor to switch off, thus limiting the amount of current that can flow in the circuit. This switching action can be used to control power in circuits, as well as to amplify signals. It is also important to note that the BC847B-13-F can be used as an amplifier, allowing signals to be amplified and any losses between the base and the collector to be rectified. This can be done by connecting the transistor in an emitter-follower configuration. With this approach, the gain will be equal to the current gain of the transistor. The BC847B-13-F is a great option for general purpose amplification applications and its small size, low cost and reliable performance make it a great choice for low power and high frequency amplification applications. Its use in television sets, cellular phones, and PDAs make it a valuable addition to any application. With its gain range of 400 to 700, the BC847B-13-F can offer the highest level of performance for applications requiring linearity, low power consumption and amplification.

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