BC847BPDW1T2G

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	NPN, PNP
Current - Collector (Ic) (Max):	100mA
Voltage - Collector Emitter Breakdown (Max):	45V
Vce Saturation (Max) @ Ib, Ic:	600mV @ 5mA, 100mA / 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max):	15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	200 @ 2mA, 5V
Power - Max:	380mW
Frequency - Transition:	100MHz
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	6-TSSOP, SC-88, SOT-363
Supplier Device Package:	SC-88/SC70-6/SOT-363
Base Part Number:	BC847BPD

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BC847BPDW1T2G Arrays - Bipolar (BJT) Transistors

BC847BPDW1T2G is a high performance NPN array, operating at a wide range of frequencies and supply voltages. This array consists of two NPN transistors and is designed for use in high frequency switching, RF, and low noise signal applications. It is also suitable for both surface-mount and through-hole technology applications.

Features

The BC847BPDW1T2G transistors have some of the following advantages and features: - Suitable for high frequency switching and signal applications - Operating voltage range of 2.8 to 20V - Low noise figure - Low power dissipation - High gain bandwidth - Features good stability - Cost effective - Easy to install in surface-mount and through-hole applications

Applications

BC847BPDW1T2G transistors are extensively used in various electronic devices and circuits, such as: - Audio and video circuits - Loudspeaker and microphone circuits - Automotive electronics - Medical and industrial equipment - High frequency switching applications - High speed digital circuits

Working Principle

BC847BPDW1T2G transistors are based on the principle of operation of a bipolar junction transistor (BJT). A bipolar junction transistor consists of three terminals, namely the base, the collector, and the emitter. When an electron current flows through the base-collector junction, an electrical field is created, which triggers the electrons to move from the collector to the emitter. The current gain of this transistor array is determined by the ratio of its collector current to its base current. Generally speaking, the higher the current gain, the greater its amplification capability. Additionally, turning the base current off leads to a sharp decrease in the collector current.

Conclusion

The BC847BPDW1T2G array is a reliable NPN transistor array that can be used in high frequency switching, RF, and low noise signal applications. Its features include low power dissipation, low noise figure, and high gain bandwidth. It is also suitable for surface-mount and through-hole applications. Finally, its working principle is based on the operation of a bipolar junction transistor.

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