BC848BL3E6327XTMA1

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Last Time Buy
Transistor Type:	NPN
Current - Collector (Ic) (Max):	100mA
Voltage - Collector Emitter Breakdown (Max):	30V
Vce Saturation (Max) @ Ib, Ic:	600mV @ 5mA, 100mA
Current - Collector Cutoff (Max):	15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	200 @ 2mA, 5V
Power - Max:	250mW
Frequency - Transition:	250MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	SOT-23-3

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.The BC848BL3E6327XTMA1 is a highly scalable, dual-gate transistor designed to offer reliable performance and suitable for applications requiring higher switching speed. The device is designed to feature low current-gain threshold voltage, low thermal resistance, and excellent linearity, making it ideal for high-frequency, high-current switching applications in industrial and commercial applications. This device is a miniature two-stage, Class A, common-collector bipolar junction transistor (BJT) operating from a single power supply. It is a low-noise device with low-power transistors and has a high gain of over 100 dB at 1 MHz. It is a single-gate BJT device with a B-E breakdown voltage (Vbe) of 0.6V, a collector-emitter voltage (Vce) of 16V, and a maximum collector current (Ic) of 150mA. The maximum power dissipation of the device is 650 mW at 25°C. The BC848BL3E6327XTMA1 is a versatile device and can be used in many different applications such as analog signal processing, frequency control, video signal processing, and memory circuits. This device is popularly used in RF to IF converters, low-noise amplifiers, low-noise oscillators, phase-locked loops, linear amplifiers, and phase shifters. This transistor is also suitable for generating wideband signals and for switching/buffering high-frequency signals. The BC848BL3E6327XTMA1 offers a wide range of features and benefits ranging from low noise, low-distortion, to reliable high-frequency operation. Its low-noise operation ensures that the device can be used in applications where minimizing noise is important, resulting in better signal-to-noise ratio. Also, the device has low distortion, ensuring that it can be used in signal processing applications.The working principle of the device is fairly straight-forward. A signal is applied to the base terminal, which is the input. This signal causes the current to pass from the base to the collector terminal. This current is then amplified and sent to the output terminal. The amount of gain is determined by the ratio of the collector resistance to the impedance of the signal applied. Overall, the BC848BL3E6327XTMA1 is a low-noise, low-distortion transistor with excellent high-frequency characteristics and is suitable for a variety of applications, including RF to IF conversions, low-noise amplifiers, low-noise oscillators, phase-locked loops, linear amplifiers, and phase shifters. The device offers reliable high-frequency operation, low thermal resistance and excellent linearity, making it ideal for applications requiring higher switching speed.

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