BC856B RFG

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The BC856B RFG is an NPN silicon semiconductor transistor utilized as a discrete device. It operates to provide low noise amplification in high power applications over the common-base configuration. This bipolar transistor is fabricated using a silicon layer over a substrate, designed for a high packing density. The product is specifically engineered for operation in radio frequency (RF) frequency applications, targeted toward the 40 V supply voltage range and the 300 mA current collector parameter. In comparison, a similar device the BC856A RFG transistor is available, however it is limited to the 200 mA parameter.

Features:

• High density simulation technology
• Low noise properties
• 20 V supply voltage range
• 200 mA current collector parameter
• Designed for radio frequency operation

Applications:

• Signal processing applications
• RF amplifiers
• ATSC receivers
• AM/FM radio amplifiers
• Cellular base station amplifiers

Working Principle:

The BC856B RFG is a NPN silicon semiconductor transistor. It principally operates as a three-terminal device, consisting of a base, a collector, and an emitter. Ingesting an electrical signal as input, the base terminal gains control of the voltage & current needed to open the device. This prompts electrons to flow from the emitter to the collector. The degree at which the collected current is determined relies on the amount of voltage applied, as more voltage results in more current flow.

All NPN transistors, which include the BC856B RFG, are characterized by the shift and the opposition of their junctions. The junction of the collector and the base is known as the base-collector junction, and the junction of the emitter and the base is called the base-emitter junction. Both of these junctions are part of the same silicon layer, allowing them to exchange electrons (holes) freely in P-type materials and electrons in N-type materials.

The junctions of the BC856B RFG plays a vital role in the device’s working principle. The base-collector junction acts as insulation, only allowing a predetermined amount of current to flow through it. Meanwhile, the base-emitter junction is the area where the main current is established. One of the inventions of the BC856B RFG process is the high quality complementary silicon structure. This structure, including several layers formed over the substrate, provides high current gain, low noise and high power dissipation for the transistor.

The NPN BC856B RFG transistor gains superior gain through its few controlling layers, with an input resistance of 800 ohms. This enables the device to effectively impedance match with the following amplifier stage. In fact, the BC856B RFG provides a higher gain, typically higher than a BJT of the same wattage, within the lower wattage range. The high breakdown voltage also grants the transistor superior switch operation, making it ideally suited for RF applications.

The BC856B RFG bias current requirement is highly dependent on the quality of the transistors, prompted by the quality of the body material and the wave-shaped structure. The collector-emitter leakage current of a BC856B RFG transistor is significantly lower than that of a BJT, and claims a high BVCE of 20 V, which makes it ideal for high performance applications that require high breakdown voltages.

In conclusion, the BC856B RFG silicon semiconductor transistor is designed for low noise, high power amplification for applications in the radio frequency domain. While able to provide superior gain, the device is able to retain a low switching noise and ensure a high breakdown voltage under any circumstance. As mentioned before, the BC856A RFG transistor is another device in the same product lineup, designed for a higher power range yet still for the same RF applications.

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