| Allicdata Part #: | BC858AMTF-ND |
| Manufacturer Part#: |
BC858AMTF |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | TRANS PNP 30V 0.1A SOT-23 |
| More Detail: | Bipolar (BJT) Transistor PNP 30V 100mA 150MHz 310m... |
| DataSheet: |  BC858AMTF Datasheet/PDF |
| Quantity: | 1000 |
Specifications
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Obsolete |
| Transistor Type: | PNP |
| Current - Collector (Ic) (Max): | 100mA |
| Voltage - Collector Emitter Breakdown (Max): | 30V |
| Vce Saturation (Max) @ Ib, Ic: | 650mV @ 5mA, 100mA |
| Current - Collector Cutoff (Max): | 15nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 110 @ 2mA, 5V |
| Power - Max: | 310mW |
| Frequency - Transition: | 150MHz |
| Operating Temperature: | 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Package / Case: | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package: | SOT-23-3 |
| Base Part Number: | BC858 |
Description
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The BC858AMTF is a high-voltage NPN transistor with a maximum collector-emitter voltage and collector current capability. This transistor can be used for many applications and is popular for amplifying high-voltage signal in amplifiers, radio-frequency (RF) circuits, and various other signal processing applications. It also has a variety of features that make it an ideal component for many applications.The BC858AMTF is designed to handle large signal swings and is suitable for applications such as high-voltage amplifiers, RF amplifiers, and voltage regulators. It has a high breakdown voltage (BVCEO) of 100V. The transistor\'s maximum current is 500mA and its maximum collector power dissipation is also 500mA. This makes it ideal for applications that require high power dissipation. Additionally, the transistor\'s thermal resistance (SRF) is low and its transition frequency is high. This makes it ideal for applications where speed and power consumption are critical.The BC858AMTF is a single-bipolar transistor which means it has two junction capacitors, an NPN and PNP junction. This allows it to be used in circuits that require an NPN and PNP transistor to perform two different functions. The NPN and PNP junction helps the transistor to act as both a switch and amplifier, which makes it ideal for circuits where a high-voltage signal needs to be amplified or switched quickly.The working principle of the BC858AMTF is based upon the transistor’s basic function of amplification. The base of the transistor acts as the input voltage source for the transistor and it amplifies the majority of the input signal to the collector. The base-emitter voltage of the transistor must be greater than the reverse breakdown voltage in order for the transistor to be active. Once the transistor is active, it can amplify the input signal and if the input rises above the reverse breakdown voltage, the transistor will then be saturated.The BC858AMTF can be used in a variety of applications and is popular for amplifying high voltage signals in amplifiers and RF circuits. It is able to handle large signal swings due to its high breakdown voltage, low thermal resistance, and high transition frequency. Additionally, it is easy to use and can be used as both a switch and amplifier which makes it ideal for applications where speed and power consumption are important.Overall, the BC858AMTF is an outstanding transistor with a range of features designed to make it a great choice for use in a variety of applications. Its high breakdown voltage and low thermal resistance makes it ideal for amplifying and switching high-voltage signals. Additionally, its high transition frequency makes it suitable for applications where speed and power consumption are important. The BC858AMTF is an ideal component for use in amplifiers, RF circuits, and various other signal processing applications.
The specific data is subject to PDF, and the above content is for reference
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