| Allicdata Part #: | BC850BMTF-ND |
| Manufacturer Part#: |
BC850BMTF |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | TRANS NPN 45V 0.1A SOT-23 |
| More Detail: | Bipolar (BJT) Transistor NPN 45V 100mA 300MHz 310m... |
| DataSheet: | BC850BMTF Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Obsolete |
| Transistor Type: | NPN |
| Current - Collector (Ic) (Max): | 100mA |
| Voltage - Collector Emitter Breakdown (Max): | 45V |
| Vce Saturation (Max) @ Ib, Ic: | 600mV @ 5mA, 100mA |
| Current - Collector Cutoff (Max): | 15nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 200 @ 2mA, 5V |
| Power - Max: | 310mW |
| Frequency - Transition: | 300MHz |
| Operating Temperature: | 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Package / Case: | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package: | SOT-23-3 |
| Base Part Number: | BC850 |
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BC850BMTF is a kind of single transistor, also known as a bipolar junction transistor (BJT). It is namely a three-layer device made up of P-type and N-type conductors which are sandwiched together. It has a collector, base and emitter. The base of the transistor is usually a heavily doped P-type material which is the middle layer connecting the two N and P sections. When the transistor is conducting, current flows from the collector to the emitter.
BC850BMTF is widely used in various types of electronic circuit applications. It is an ideal switch for low- and high-frequency applications. Its characteristics make it suitable for applications such as amplifiers, switches and protectors. Furthermore, it is highly reliable with excellent heat dissipation properties in comparison to FETs and BJTs. In data handling, BC850BMTF has been used to construct logic circuits and pulse motors.
The working principle of a BC850BMTF explain how it can operate in either the cut-off or saturation region when the base bias voltage is forward-biased. The base and emitter currents can then be adjusted accordingly. The saturation voltage of the transistor is the voltage of the collector when the transistors is in the active mode. With the h parameters of the transistors, the saturation voltages and collector currents can be estimated. To calculate the h parameters of the transistor, a pair of experiments is needed.
When the base voltage is above a certain point, the transistor is biased into the cut-off region and no current flows from the collector to the emitter. This is known as the minimum base voltage. When the base voltage is lower than the minimum voltage, the transistor is in saturation mode. The base and collector current vary with the base voltage and the h parameters are determined. Since the h parameters of the transistor are known, the collector and emitter currents can be determined. The current amplification factor, or beta, is determined by the h parameters. The beta of a BC850BMTF can reach between 100 and 300.
The BC850BMTF is an easy to operate transistors, with characteristics that make it suitable for many applications. Its high performance and wide range of characteristics depend on the particular type of transistor. Thus, it is often preferred in many different kinds of electronic devices. It has been used in a wide range of applications, such as automotive, security, telecommunications, and consumer electronics.
The specific data is subject to PDF, and the above content is for reference
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BC850BMTF Datasheet/PDF