BC858CLT1G

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BC858CLT1G is a single, general-purpose, plastic-encapsulated NPN bipolar junction transistor (BJT). It is designed for use in medium-power switching and amplifier applications.

absolute maximum ratings:

• Collector-base voltage: -80V
• Collector-emitter voltage: -40V
• Emitter-base voltage: -5V
• Continuous collector current: 0.15A
• Power dissipation: 500mW
• Operating temperature range: -65°C to +150°C

BC858CLT1G is used in a wide range of applications, including power switching and amplifier applications. Its qualities of low-noise operation, high current gain, fast switching speeds and low power dissipation make it an ideal choice for these applications.

The BC858CLT1G employs a bipolar semiconductor with NPN characteristics, which means that the current flow is controlled by the voltage applied to the base terminal. A small increase in the current of the emitter-base junction causes a large increase in the collector current.

The basic function of the BC858CLT1G is as a switch. When a voltage source is applied to the base terminal, current flows from the emitter to the collector, allowing devices such as relays, motors and lights to be switched on and off. The BC858CLT1G is also used as an amplifier, as the current increase in the emitter-base junction can be used to amplify an AC or DC signal.

In addition, the BC858CLT1G can be used for data processing, as it can switch very quickly, allowing data to be processed at high speeds. The BC858CLT1G is also used in LCD displays and radio frequency circuit applications.

The BC858CLT1G is a versatile and reliable semiconductor device that can be used in a wide range of applications. Its low-noise operation, fast switching speed and low power dissipation make it an ideal choice for power switching and amplifier applications.

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