BC857CW/MIX

Series:	--
Part Status:	Last Time Buy
Transistor Type:	PNP
Current - Collector (Ic) (Max):	100mA
Voltage - Collector Emitter Breakdown (Max):	45V
Vce Saturation (Max) @ Ib, Ic:	600mV @ 5mA, 100mA
Current - Collector Cutoff (Max):	15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	420 @ 2mA, 5V
Power - Max:	200mW
Frequency - Transition:	100MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	SC-70, SOT-323
Supplier Device Package:	SC-70

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Introduction to BC857CW/MIX

BC857CW/MIX is a type of single bipolar junction transistor (BJT). This type of transistor is composed of many layers and is mainly used for switching and amplification purposes. By using this type of transistor, engineers are able to control the desired electrical current, voltage and power. In the case of BJTs, current is controlled using the base-emitter junction.

Application Field

BC857CW/MIX is mainly used in low-noise, wide-bandwidth, low-power networks. It can be used to amplify signals in applications such as audio amplifiers, radio transmitters and receivers, oscillators, etc. Moreover, in medical applications, BJTs are used in body-implantable or wearable circuits due to their miniaturized size and their non-toxicity.

Working Principle

BJTs have three terminals namely base, emitter and collector. The working operation of BJTs follows the Ebers-Moll equation, which states that the emitter current is equal to the sum of the collector current and the base current.When there is a positive voltage applied at the base-emitter junction, a small current flows from the base pin to the emitter pin and the transistor is said to be in its active region. In this active region, the collector current will be proportional to the base current. This effect is known as current-gain or hFE.For BC857CW/MIX transistors, the collector current (Ic) will be the same as the base current (IB) multiplied by the gain factor hFE. This gain factor plays an important role in determining the transistor’s operating point.The base-emitter junction is also known as an emitter-base diode. This diode acts as a junction when a voltage is applied across its terminals. The junction also acts as a switch as it either blocks or allows the current to pass through it.

Conclusion

In summary, BC857CW/MIX single bipolar junction transistors (BJT) are widely used for switching and amplifying purposes in low-noise, wide-bandwidth and low-power net

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