Allicdata Part #: | BC858BWE6327HTSA1TR-ND |
Manufacturer Part#: |
BC858BWE6327HTSA1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | TRANS PNP 30V 0.1A SOT-323 |
More Detail: | Bipolar (BJT) Transistor PNP 30V 100mA 250MHz 250m... |
DataSheet: | BC858BWE6327HTSA1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 30V |
Vce Saturation (Max) @ Ib, Ic: | 650mV @ 5mA, 100mA |
Current - Collector Cutoff (Max): | 15nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 220 @ 2mA, 5V |
Power - Max: | 250mW |
Frequency - Transition: | 250MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SC-70, SOT-323 |
Supplier Device Package: | PG-SOT323-3 |
Base Part Number: | BC858 |
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BC858BWE6327HTSA1 is a type of bipolar junction transistors (BJT) which are featured by two junctions of two types of semiconductor material, a P-N-P type or an N-P-N type which acts like a switch or an amplifier. These transistors are generally divided into two categories, PNP transistors and NPN transistors. BC858BWE6327HTSA1 belongs to the single type of NPN transistors and has many excellent features.
BC858BWE6327HTSA1 has a wide range of applications, such as electrical and electronic circuits and industrial control systems. This NPN transistor is ideal for small signal amplifiers, switches and other general purpose applications. It has a high maximum collector current rating of 200mA, a low base-emitter voltage drop of only 0.7V, and a maximum power dissipation rating of 500mW. Furthermore, its high gain allows a wide range of circuits to be built including amplifiers, linear voltage regulators, driver circuits, and motor drives.
The working principle of BC858BWE6327HTSA1 revolves around the interaction between two PN junctions. The transistor’s base-emitter junction acts like a diode, allowing electrons to flow when forward biased and blocking current when reverse biased. The base-collector junction works similarly, but with much less forward current. When combined, the two junctions can control the current between the collector and the emitter terminals. In a common emitter circuit configuration, a small current at the base terminal will control a much larger current through the collector and emitter terminals.
BC858BWE6327HTSA1 is made up of two NPN transistors connected in parallel. Each of these transistors controls a separate portion of the collector current. This feature makes the BC858BWE6327HTSA1 ideal for applications that require very low saturation voltage and/or high gain. Additionally, the NPN construction allows for very fast switching times.
In general, the BC858BWE6327HTSA1 is a great choice for many small signal and switching applications. With its wide variety of features, this transistor-can take on the role of amplifier, switch or regulator in many circuits. Its low-power consumption and wide current range make it a great choice for in-circuit use.
The specific data is subject to PDF, and the above content is for reference
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