BC858CDXV6T5 Allicdata Electronics
Allicdata Part #:

BC858CDXV6T5OS-ND

Manufacturer Part#:

BC858CDXV6T5

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS 2PNP 30V 0.1A SOT563
More Detail: Bipolar (BJT) Transistor Array 2 PNP (Dual) 30V 10...
DataSheet: BC858CDXV6T5 datasheetBC858CDXV6T5 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: 2 PNP (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Power - Max: 500mW
Frequency - Transition: 100MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563
Base Part Number: BC858CDXV6
Description

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The BC858CDXV6T5 transistor array is a family of general-purpose bi-polar Junction transistors (BJT) which can be used to form amplifying or switching circuits. As a BJT array, the BC858CDXV6T5 is designed to provide high-speed switching performance and can be used in a variety of applications, such as digital logic circuits, pulse amplifiers, and switching power supplies.

The BC858CDXV6T5 transistor array is a three-transistor array consisting of two NPN transistors in the BC856 and one PNP transistor in the BC859. Each transistor is designed to provide low threshold current and good current gain, and has a wide operating temperature range of -40 to +85°C. This makes it suitable for use in a wide range of environments and applications.

The key feature of the BC858CDXV6T5 is its low input capacitance, which makes it suitable for high-speed switching applications. This low input capacitance allows the array to respond quickly to input signals, making it ideal for use in digital logic circuits, pulse amplifiers, and power supplies. Together, these features make the BC858CDXV6T5 an ideal choice for applications that require high-speed and high-efficiency switching performance.

The BC858CDXV6T5 is also capable of providing high-power circuit protection. This is achieved through the transistors’ high breakdown voltage, which helps to protect circuits from abnormal currents. The array is also designed with a wide safety margin and an internal current shutoff feature, which helps to protect against overloading and other potentially hazardous conditions.

The BC858CDXV6T5\'s working principle is based on the principle of BJT transistors. Each transistor in the array is designed with its own base-emitter junction, which increases the total amount of current that can flow through the transistor. The base-collector junction of the NPN transistors and the base-emitter junction of the PNP transistor forms a junction, which controls the flow of current, allowing the array to switch between on and off states. The current gain of the transistors allows them to amplify incoming signals, making them ideal for amplifying weak signals.

The BC858CDXV6T5 transistor array is an ideal choice for a variety of applications, including digital logic circuits, pulse amplifiers, and switching power supplies. Its low input capacitance and high breakdown voltage make it suitable for high-speed switching applications. Its wide safety margin and internal current shutoff feature help to protect circuits from overloading and other potentially hazardous conditions.

The specific data is subject to PDF, and the above content is for reference

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