BC857ALT1G

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

BC857ALT1G is a small signal NPN transistor designed to meet the requirements of high frequency and low noise amplifier jobs. It is a single-ended NPN transistor, which is primarily designed for surface mount applications in the high frequency direction. It is an ultra-low noise, low power and low profile transistors which can be used to amplify or switch signals in television, electronics and communication equipment.

The BC857ALT1G is a typical small signal NPN transistor, utilizing a high-frequency monolithic process for high performance. It features a low transition frequency, low noise figure and low power consumption. The high-frequency monolithic bipolar transistor can be used to offer stable performance at frequencies up to 900MHz. The BC857ALT1G offers high gain, low noise and low reverse current, making it ideal for practical applications.

The BC857ALT1G has an emitter-to-base voltage, collector-to-emitter saturation voltage and is rated at a collector current of -100mA. The collector-emitter voltage of the BC857ALT1G is relatively constant up to a frequency of 900MHz. Its dc current gain is typically in the range from 250 to 500, depending on the operating conditions. It covers a wide range of operating temperature from -55°C to +150°C and is able to withstand up to 8.5Volt reverse voltage.

As a single-ended transistor, the BC857ALT1G features symmetrical RBE and RBG characteristics. It also features low Beta and low Cc, making it especially suitable for high frequency applications. It can be used with synchronous switching and can be used in signal amplification applications.

The working principle of the BC857ALT1G is quite simple. When voltage is applied to the collector, a small current flows through the transistor and the collector current increases exponentially. The current gain of the transistor is defined as the ratio between the collector current and emitter current. The higher the current gain, the lower the collector current. The BC857ALT1G is designed to provide high current gains under various operating conditions. As a result, it is able to provide high efficiency and low noise performance at high frequencies.

The BC857ALT1G provides excellent performance in a variety of high frequency applications. It can be used in high voltage switching circuits, amplifier applications and general purpose signal amplification. It is an ideal choice for use in the design of audio amplifiers and power switching circuits. The BC857ALT1G is also well suited for use in automotive audio systems, telecommunication equipment and other high frequency applications.

In conclusion, the BC857ALT1G is a highly reliable, single-ended NPN transistor, which is specifically designed for high frequency applications. It offers excellent performance and is a great choice for use in a wide range of electronic applications. With its high frequency capabilities and low noise characteristics, it is an ideal choice for use in various applications, including high voltage switching circuits, amplifier applications and general purpose signal amplification.

The specific data is subject to PDF, and the above content is for reference