BC857AMB,315 Allicdata Electronics
Allicdata Part #:

BC857AMB,315-ND

Manufacturer Part#:

BC857AMB,315

Price: $ 0.02
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: TRANS PNP 45V 0.1A 3DFN
More Detail: Bipolar (BJT) Transistor PNP 45V 100mA 100MHz 250m...
DataSheet: BC857AMB,315 datasheetBC857AMB,315 Datasheet/PDF
Quantity: 1000
10000 +: $ 0.01912
Stock 1000Can Ship Immediately
$ 0.02
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: PNP
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V
Power - Max: 250mW
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-XFDFN
Supplier Device Package: 3-DFN1006B (0.6x1)
Base Part Number: BC857
Description

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BC857AMB-315 transistors are single bipolar junction transistors (BJTs) that can be used in numerous electronic applications. These transistors use a base-collector-emitter architecture and have silicon-based PNP structure. They are also extremely capable of handling large current and voltage rating and can be used for both digital and analogue applications.

These transistors have a maximum current handling capacity of 150mA, which makes them ideal for use in digital and analogue circuits. They also have a high power output rating of 800mW, which allows them to be used in circuits that require high performance and reliability. Additionally, the transistors have a peak reverse breakdown voltage of 50V, which allows them to be used in operations that require efficient voltage management. Furthermore, they offer an at-max current gain of 600, which makes them suited for applications that require fast switching times.

In terms of its operational characteristics, BC857AMB-315 transistors have some impressive features. They have a fast switch-on time of 25 nanoseconds. This makes them even more suitable for high-speed applications. Additionally, the transistors can handle a very high gate voltage of +20V. This makes them suitable for applications that require a wide voltage range. Furthermore, BC857AMB-315 transistors have a very low total gate capacitance of 21pF, which makes them more efficient in terms of power.

Regarding their applications, BC857AMB-315 transistors can be used in a variety of applications. These transistors can be used in digital circuits, such as logic circuits, digital multiplexers, and microcontroller circuits. Additionally, these transistors can be used in analogue circuits, such as audio amplifiers, motor controls, and high-current switching circuits. Furthermore, they can be used in photovoltaic circuits, RF circuits, and health monitoring circuits.

In terms of their working principle, the transistors use a 3-terminal structure that is made up of the base, collector, and emitter terminals. When a voltage is applied across the base and the collector terminals, it creates a current flow from the collector to the emitter terminals. This current flow affects the behaviour of the transistor depending on the type of circuit. In digital circuits, for example, the base-emitter junction can be used as a switch to control the voltage level between the collector and the emitter.

In conclusion, BC857AMB-315 transistors are single bipolar junction transistors that can be used for a variety of electronic applications. These transistors have high-current handling capacities, wide voltage ranges, and fast response times, making them suitable for both digital and analogue applications. Furthermore, they have a 3-terminal structure, allowing them to be used in a variety of circuits.

The specific data is subject to PDF, and the above content is for reference

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