Allicdata Part #: | BC857B-HF-ND |
Manufacturer Part#: |
BC857B-HF |
Price: | $ 0.03 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Comchip Technology |
Short Description: | TRANS PNP 45V 100MA SOT23 |
More Detail: | Bipolar (BJT) Transistor PNP 45V 100mA 100MHz 250m... |
DataSheet: | BC857B-HF Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.02495 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 45V |
Vce Saturation (Max) @ Ib, Ic: | 650mV @ 5mA, 100mA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 125 @ 2.2mA, 5V |
Power - Max: | 250mW |
Frequency - Transition: | 100MHz |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23 |
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BC857B-HF is a bipolar junction transistor (BJT) specifically designed for low-power, high-frequency applications. It is designed to operate directly from a battery or other power source to provide optimum performance and reliability. The BC857B-HF has a high frequency range up to 1 GHz and operates from -65°C to 175°C. This makes it ideal for use in high-temperature and demanding applications.
Applications
The BC857B-HF has a wide range of applications. It is ideal for handheld and other battery powered products, such as portable radios and speakers. It can also be used in RF power amplifier stages in cellular base-stations, automotive, and military transmitters. It is also suitable for controlling microwave ovens and other high-frequency power switching applications.
Advantages
The BC857B-HF has several advantages over other BJT types. One of the main advantages is its low power consumption. It is suitable for use with low voltage applications and its high frequency performance ensures high performance. Other advantages include its compact size, excellent thermal, and mechanical stability. The BC857B-HF is also relatively inexpensive and is readily available from many suppliers.
Working Principle
At the heart of any BJT is a PN junction that acts as the current controlling element in the device. This junction allows current to flow freely in one direction, and virtually blocks it from flowing in the opposite direction. The BC857B-HF works on this basic principle. It consists of two layers, a collector layer and an emitter layer, that are separated by an extremely thin layer of silicon. In order for current to flow between the layers, a voltage must be applied. The voltage applied must be slightly higher than the voltage of the junction, which is called the “cut-off” voltage. The amount of current that flows between the collector and emitter depends on the size of the applied voltage. As the voltage increases, more current is allowed to flow through the transistor.
Conclusion
The BC857B-HF is a low-power, high-frequency BJT. It offers excellent performance and reliability and is ideal for handheld and other battery powered products. It is also suitable for RF power amplifier stages in cellular base-stations, automotive, and military transmitters, and for high-frequency power switching applications. It is designed to operate directly from the battery or other power source and operates from -65°C to 175°C. The BC857B-HF has many advantages over other BJT types, including its low power consumption, excellent thermal and mechanical stability, and low cost.
The specific data is subject to PDF, and the above content is for reference
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