Allicdata Part #: | BC857CDW1T1GOSTR-ND |
Manufacturer Part#: |
BC857CDW1T1G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS 2PNP 45V 0.1A SOT363 |
More Detail: | Bipolar (BJT) Transistor Array 2 PNP (Dual) 45V 10... |
DataSheet: | BC857CDW1T1G Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | 2 PNP (Dual) |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 45V |
Vce Saturation (Max) @ Ib, Ic: | 650mV @ 5mA, 100mA |
Current - Collector Cutoff (Max): | 15nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 420 @ 2mA, 5V |
Power - Max: | 380mW |
Frequency - Transition: | 100MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: | SC-88/SC70-6/SOT-363 |
Base Part Number: | BC857CD |
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Transistors are widely used for a variety of purposes in everything from high-end electronics to everyday items. A major way transistors are used is to create a circuit board with an array of transistors configured in either a linear array or an interconnected set of other transistors. The BC857C-DW-1T1G is one such transistor array, designed to be an integrated dual NPN Bipolar Junction Transistor (BJT). The BC857C-DW-1T1G is popularly used in both small-scale electronics and large-scale industrial applications.
BC857C-DW-1T1G Application Field and Working Principle
The BC857C-DW-1T1G is an integrated double NPN BJT array. Its standard characteristics include a current gain (β) of 200-500 and a low noise. Its maximum collector current is 500mA and the maximum collector-emitter voltage (Vce) is 45V. The features that make it attractive for many applications include its pair of transistors in one package, low power dissipation, and its minimal operating temperature.
The primary applications for BC857C-DW-1T1G are small-scale electronics such as interface circuitry, amplifier stages, and switching circuits. The design of the BC857C-DW-1T1G is ideal for low-power applications as its low power dissipation allows it to perform reliably at reduced operating temperatures. The multiple transistors that make up this array can be used to create a ‘daisy-chain’ type circuit, providing an efficient design where power needs to be distributed across multiple outputs.
The BC857C-DW-1T1G works because the multiple transistors each have the same base, an arrangement which allows them to amplify each other\'s signals. This arrangement grants the BC857C-DW-1T1G multiple collector current paths. The multiple transistors can also be used to divide voltage or increase voltage levels, thus allowing for a great level of flexibility when creating complex circuits with the BC857C-DW-1T1G as its core component.
The BC857C-DW-1T1G can be used in a variety of ways and its adaptability makes it a popular integrated dual NPN BJT array for many digital circuit boards. Its low power dissipation, flexibility, and small footprint make it ideal for low-power applications. In short, the BC857C-DW-1T1G is an ideal choice for a wide variety of circuit applications.
The specific data is subject to PDF, and the above content is for reference
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