BC858A-HF

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	PNP
Current - Collector (Ic) (Max):	100mA
Voltage - Collector Emitter Breakdown (Max):	30V
Vce Saturation (Max) @ Ib, Ic:	650mV @ 5mA, 100mA
Current - Collector Cutoff (Max):	15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	125 @ 2.2mA, 5V
Power - Max:	250mW
Frequency - Transition:	100MHz
Operating Temperature:	-65°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	SOT-23

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Introduction:

BC858A-HF is an NPN silicon high-frequency general purpose transistor, which provides excellent gain performance and excellent frequency response. It is a single-transistor bipolar junction transistor (BJT) and can be used in various applications ranging from amplification to oscillation.

Application Field:

BC858A-HF can be used in many applications ranging from oscillations to amplifications. Most commonly it is used for amplification. It has excellent gain performance because it is an NPN silicon transistor, which means it has an amplified response. Additionally, it has a high frequency response, which is perfect for amplifications and radio frequency circuits.Another popular application of the BC858A-HF is in oscillators. Oscillators are electronic circuits that generate repeated AC signals, and require a precise frequency and phase range. The BC858A-HF can be used in oscillators because it has excellent stability, which is required for this type of application.Lastly, the BC858A-HF is also used in power circuit design because it has a low saturation voltage, which means that it is suitable for low-voltage applications. Furthermore, it has high power gain, which makes it ideal for power circuits, because the power required to drive the circuit is much lower than other transistors.

Working Principle:

The BC858A-HF utilizes a basic bipolar junction transistor (BJT) structure. The BJT consists of an n-type material, which is connected between the base and the collector, and a p-type material, which is connected between the base and the emitter. The BJT works by controlling the collector current with a control voltage applied to the base. When the voltage applied to the base is greater than the base-emitter voltage, current can flow from the emitter to the collector. This causes the collector current to increase, which in turn increases the voltage across the collector-emitter of the BJT. The switch of the BJT is in a “closed” state, which means that current can flow through the device. When the voltage applied to the base is less than the base-emitter voltage, the current flowing between the emitter and the collector is cut off and the voltage across the collector-emitter decreases. This causes the switch to be in an “open” state, which means that no current can flow through the device. The BC858A-HF is able to operate at higher frequencies than other BJTs, due to its high-frequency characteristics. This is because the total capacitance of the device is smaller than standard BJTs, allowing it to switch faster. Additionally, the high-frequency response of the BC858A-HF allows it to operate in radio-frequency circuits.

Conclusion:

BC858A-HF is an excellent high-frequency transistor with excellent gain performance and excellent frequency response. It is a single-transistor bipolar junction transistor (BJT) that can be used for amplifications, oscillations, and in power circuit designs. It works by controlling the collector current with a control voltage applied to the base. The high-frequency characteristics of the BC858A-HF make it suitable for use in radio-frequency circuits.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description