BC858BE6327HTSA1

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Last Time Buy
Transistor Type:	PNP
Current - Collector (Ic) (Max):	100mA
Voltage - Collector Emitter Breakdown (Max):	30V
Vce Saturation (Max) @ Ib, Ic:	650mV @ 5mA, 100mA
Current - Collector Cutoff (Max):	15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	220 @ 2mA, 5V
Power - Max:	330mW
Frequency - Transition:	250MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	SOT-23-3
Base Part Number:	BC858

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Introduction to BC858BE6327HTSA1

BC858BE6327HTSA1 is a single transistor type of bipolar junction transistor (BJT). It is capable of switching, amplifying, and regulation within various applications. To better understand the features and regulations associated with the application of this BJT, it is helpful to examine the structure of this device.

Structure of the BC858BE6327HTSA1

The BC858BE6327HTSA1 is a mature, reliable semiconductor BJT device. It is composed of an emitter, a base, and a collector. It exhibits high output current and a high slew rate, allowing faster switching capabilities compared to other BJTs. The BC858BE6327HTSA1 also has a high gain and low noise level making it suitable for applications requiring low noise and high gain. The BC858BE6327HTSA1 has a maximum DC current gain of around 1000 and a maximum base-collector voltage rating of 65.0V. It is designed with a single-sided lead in order to offer an optimal thermal design and mounting. The BC858BE6327HTSA1 also features a high thermal impedance, ideal for applications involving high switching speed or high currents.

Application Fields of BC858BE6327HTSA1

The BC858BE6327HTSA1 is used in a variety of applications, such as amplifier design, power management, and motor control. Its high output current capabilities make it ideal for driving motors. Its high gain also makes it suitable for amplifier designs requiring high accuracy. In addition to its use as an amplifier and motor driver, the BC858BE6327HTSA1 is also used in power management applications. Its high base-collector voltage rating allows it to be used for applications up to 65.0V. The BC858BE6327HTSA1 can also be used in switching power supplies and DC-DC converters due to its high slew rate. Beyond these applications, the BC858BE6327HTSA1 is also used in high frequency applications, as it can offer high bandwidths and fast switching speeds.

Working Principle of BC858BE6327HTSA1

BJTs, such as the BC858BE6327HTSA1, inherently consist of three components: the emitter, the base, and the collector. In the BC858BE6327HTSA1, it operates on both the current and voltage across it. In its forward-biased imaging operation, a relatively high current flows through the BC858BE6327HTSA1, resulting in a current gain ratio of about 1000. The BC858BE6327HTSA1 is also voltage-controlled, with the collector voltage being dependent on the voltage applied to the base. When the base voltage is the same as the emitter voltage, the collector current reaches a maximum. In its reverse-biased operation, the BC858BE6327HTSA1 works as an insulator, completely blocking the flow of current between the collector and the emitter. This is how the device switches or amplifies the current, allowing it to be used as a current switch in various applications.

Conclusion

The BC858BE6327HTSA1 is a single-transistor type bipolar junction transistor (BJT). It exhibits high output current and a high slew rate, allowing it to be used in various applications. The BC858BE6327HTSA1 is used in amplifier designs, motor control, power management, and high frequency applications due to its high gain and fast switching speed. It operates on both current and voltage, and works as an insulator in reverse-biased operation. Overall, the BC858BE6327HTSA1 is a reliable, mature semiconductor device with many benefits and applications.

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