BCP53,115 Allicdata Electronics
Allicdata Part #:

1727-4245-2-ND

Manufacturer Part#:

BCP53,115

Price: $ 0.08
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: TRANS PNP 80V 1A SOT-223
More Detail: Bipolar (BJT) Transistor PNP 80V 1A 145MHz 1W Surf...
DataSheet: BCP53,115 datasheetBCP53,115 Datasheet/PDF
Quantity: 1000
1000 +: $ 0.06615
2000 +: $ 0.05954
5000 +: $ 0.05623
10000 +: $ 0.05127
25000 +: $ 0.04796
50000 +: $ 0.04410
Stock 1000Can Ship Immediately
$ 0.08
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: PNP
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Power - Max: 1W
Frequency - Transition: 145MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223
Base Part Number: BCP53
Description

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A BCP53,115 transistor is a type of bipolar junction transistor which is used for a variety of applications. This type of transistor is used to amplify or switch electronic signals, and is commonly used in electronics such as control systems, audio equipment, and computer applications. The BCP53,115 transistor is an NPN type, meaning that it has three pins, with the base connected to the emitter, the collector connected to the emitter, and the collector connected to the substrate. The main features of this type of transistor include low collector-emitter saturation voltage, low capacitance, high speed operation, and high current gain.

The working principle of this type of transistor is based on a phenomenon known as minority carrier injection. In this process, minority carriers are injected into the base region of the transistor, and are then collected by the collector electrodes. The emitter collector current is then amplified by the collector and the emitter, resulting in a higher level of current potential. When this potential is increased, it will then be able to drive higher current levels.

When the BCP53,115 transistor is used in applications, it is important to understand the proper use of the base-collector-emitter configuration. The base of the transistor is connected to the emitter, where electrons are injected from the base into the collector region. The collector is then connected to the substrate, and electrons from the collector are collected by the substrate, passing through the collector. At this point, the current potential is increased by the collector, resulting in the amplification of the signal. The emitter then works to divert the current generated by the collector back to the substrate, helping to complete the amplifier or switch circuit.

BCP53,115 transistors can be used in a wide range of circuits and applications. They are commonly used in amplifier design, as they are able to provide wide bandwidths and high gains. Additionally, they are often used in control systems, memory circuits, and power supply circuits, as they are highly reliable and efficient. When using this type of transistor, it is important to select the right type for the application, as the electrical parameters can vary greatly.

The BCP53,115 transistor is one of the most popular transistors for a variety of applications. Its low collector-emitter saturation voltage, low capacitance, high speed operation, and high current gain make it a great choice for many applications. Additionally, its base-collector-emitter configuration makes it ideal for use in amplifiers and other circuits. By understanding its working principle and selecting the right type for the application, this type of transistor can be used in a wide range of devices and circuits.

The specific data is subject to PDF, and the above content is for reference

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