BCP5316H6433XTMA1 Allicdata Electronics
Allicdata Part #:

BCP5316H6433XTMA1-ND

Manufacturer Part#:

BCP5316H6433XTMA1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: TRANS PNP 80V 1A SOT223
More Detail: Bipolar (BJT) Transistor PNP 80V 1A 125MHz 2W Surf...
DataSheet: BCP5316H6433XTMA1 datasheetBCP5316H6433XTMA1 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Last Time Buy
Transistor Type: PNP
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Power - Max: 2W
Frequency - Transition: 125MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: PG-SOT223-4
Base Part Number: BCP53
Description

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Transistors - Bipolar (BJT) - Single

BCP5316H6433XTMA1 is a bipolar single transistor device widely used in the electronics industry. It is a small signal transistor that can be used in a variety of applications, including general purpose switching, amplifier, and interface circuits. The device is available in various packages, with the TO-92 package being the most common.

Application Field

BCP5316H6433XTMA1 can be used for a range of different applications, such as audio amplification, preamplification and small signal switching. The device is also widely used in computer circuits, telecommunications systems, and medical systems. The device is popular in many industrial applications because of its low power consumption and stability.

The device is well-suited for use in general-purpose switching, and interface circuits. It is also widely used for automotive circuits due to its long-term reliability and excellent gain-bandwidth product. Additionally, it is suitable for use in sensitive analog circuits, due to its low noise characteristics.

Working Principle

The BCP5316H6433XTMA1 consists of one n-channel and one p-channel transistor. Each of these transistors is arranged in a common emitter configuration. The transistors are connected in parallel, with the emitter being shared by both. The emitter is what provides the input voltage to the transistor, while the collector provides the output voltage.

The n-channel and p-channel transistors are used to create a complimentary common base amplifier. When a voltage is applied to the base of the transistor, the output from the collector is dependent on the current passing through the transistor. This current is determined by the current gain (Hfe) of the transistor. The Hfe of the BCP5316H6433XTMA1 is typically high, around 100.

The output of the transistor is also affected by the biasing of the transistor. In order to ensure the transistor remains in its active region, biasing resistors are used to set the correct quiescent current. The quiescent current is typically set to a value between 10-100mA. Once the design is completed, the device can be tested by measuring the voltage across the load. If the voltage is too large then the biasing is too high; if the voltage is too small then the biasing is too low.

Conclusion

The BCP5316H6433XTMA1 is a low-power, high-gain transistor device for a range of applications. Applications include audio preamplification, small signal switching, and general purpose circuits. The device consists of two transistors connected in a common emitter configuration and is biased with resistors to ensure its operation in the active region. The Hfe of the transistor is low, around 100, and the quiescent current should be set between 10-100mA. The device can be tested by measuring the voltage across the load.

The specific data is subject to PDF, and the above content is for reference

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