BCP53HX Allicdata Electronics
Allicdata Part #:

1727-7408-2-ND

Manufacturer Part#:

BCP53HX

Price: $ 0.08
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: TRANS PNP 80V 1A SC73
More Detail: Bipolar (BJT) Transistor PNP 80V 1A 100MHz 2.2W Su...
DataSheet: BCP53HX datasheetBCP53HX Datasheet/PDF
Quantity: 1000
1000 +: $ 0.07859
2000 +: $ 0.07204
5000 +: $ 0.06767
10000 +: $ 0.06331
25000 +: $ 0.05821
Stock 1000Can Ship Immediately
$ 0.08
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: PNP
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Power - Max: 2.2W
Frequency - Transition: 100MHz
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SC-73
Description

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BCP53HX is an NPN transistor characterized by a high-voltage gain and low inductance, making it ideal for use in power applications.

The BCP53HX is a single-pole, double-throw (SPDT) switch that allows selective power transfer to different load paths. It is composed of a single NPN bipolar junction transistor (BJT). It has two emitter-base junctions, with one emitter attached to a voltage source, and the other emitter connected to the load circuit. Thecollector is connected to both emitters, while the base serves as the controlling terminal.

The BCP53HX has a voltage gain of up to 7.3V, and a maximum current rating of 150mA. It has a breakdown voltage of 425V and a maximum forward voltage drop of 1.15V. It is also capable of switching at 400V/µs.

A BJT is an active semiconductor device with three terminals (base, collector and emitter). The BJT transistors are used for amplification and switching applications. The operation of the BJT depends on the charge of electrons and holes inside the semiconductor material. In a BJT, the base terminal controls the flow of electrons from the emitter to collector.

In a BJT transistor, current flows from the emitter to the collector when the base emitter voltage is forward biased. This causes electrons to move from the emitter to the collector, and produces the amplified output. Conversely, when the base emitter voltage is reverse biased, electrons stop moving and the current flow is cut off.

The on/off conditions of the BJT transistor are determined by the voltage applied to the base terminal. The maximum voltage that can be applied to the base terminal is called the saturation voltage. This is the voltage at which the BJT transistor is fully saturated, and the current flowing through it is at its maximum.

The working principle of the BCP53HX is the same as the other BJT transistors. Its operating principle relies on the three terminals – base, collector and emitter. When voltage is applied to the base, current can flow from the emitter to the collector, and an amplified output is produced. This amplified output can be used to control a variety of power applications, such as motor drives, power switching, and power supplies.

The BCP53HX is an excellent choice for power applications. With its high-voltage gain and low inductance, it can be used for a wide variety of power applications, including motor drives, power switching, and power supplies. Its various switches also make it perfect for switching multiple components on and off from the same device, making it an invaluable tool for power control.

The specific data is subject to PDF, and the above content is for reference

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