BCP53T1G Allicdata Electronics
Allicdata Part #:

BCP53T1GOSTR-ND

Manufacturer Part#:

BCP53T1G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PNP 80V 1.5A SOT223
More Detail: Bipolar (BJT) Transistor PNP 80V 1.5A 50MHz 1.5W S...
DataSheet: BCP53T1G datasheetBCP53T1G Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: PNP
Current - Collector (Ic) (Max): 1.5A
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
Power - Max: 1.5W
Frequency - Transition: 50MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223
Base Part Number: BCP53
Description

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The BCP53T1G is a single bipolar junction transistor (BJT) which offers a high power capability and is well suited for a wide range of applications, from amplifier and switching applications to voltage regulation and interface circuits. The BCP53T1G is designed with an integrated base-emitter junction, which is designed to provide fast switching and excellent voltage regulation, while delivering low on-state and off-state resistance. The BCP53T1G is available in TO-220, TO-252 and SOT-223 packages.

The BCP53T1G is designed to be a general-purpose device, but can also be used in applications that require low-noise operation, such as audio amplifiers, motor control systems, and switching applications. It is also suitable for high-power applications, such as automotive power supplies and linear power supply circuits. The BCP53T1G is capable of switching up to 40A and can handle up to 40V, making it an ideal choice for power switching applications.

The BCP53T1G is a PNP transistor which when combined with an NPN transistor, forms a complementary pair. It is designed to operate as a switch, with the collector terminal controlling the current flow from the emitter to the base. The base is connected to an external voltage source, and the collector is connected to the load. When the base voltage is increased, the collector current increases, turning the transistor into an amplifier with increased voltage gain.

The BCP53T1G\'s other features include base-emitter junction isolation and forward current gain, both of which are designed to help reduce noise and improve stability in switching applications. It also features a low voltage drop, reducing power losses and the need for large power supply components. The transistor is rated for a maximum operating junction temperature of 150C and is designed to operate safely up to 125C.

The BCP53T1G\'s primary application is in amplifier and switching applications, as well as in linear circuits such as voltage regulator circuits and interface circuits. It is suitable for a wide range of power circuits, such as automotive, audio and industrial applications. It is also a good choice for high power switching applications, such as LED drivers, motor control systems and high-voltage switching devices.

In summary, the BCP53T1G is a high-power single bipolar junction transistor (BJT), which is well suited for a wide range of applications such as amplifier and switching circuits, voltage regulator circuits, interface circuits, and high power switching applications. It boasts excellent voltage regulation, low on-state and off-state resistance, low voltage drop, and is rated for operation up to 125C. It is easy to use, making it a popular choice for a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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